SANO Nobuyuki | Institute of Applied Physics, University of Tsukuba
スポンサーリンク
概要
関連著者
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SANO Nobuyuki
Institute of Applied Physics, University of Tsukuba
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Sano Nobuyuki
Institute Of Applied Physics The University Of Tsukuba
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NATORI Kenji
Institute of Applied Physics, University of Tsukuba
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Natori Kenji
Institute Of Applied Physics University Of Tsukuba
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佐野 伸行
筑波大学物理工学系
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MATSUZAWA Kazuya
Semiconductor Technology Academic Research Center(STARC)
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Matsuzawa Kazuya
Semiconductor Technology Academic Research Center (starc)
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Matsuzawa Kazuya
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Corporation
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Matsuzawa Kazuya
Semiconductor Technology Academic Research Center
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Matsuzawa K
Toshiba Corp. Yokohama‐shi Jpn
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佐野 伸行
筑波大 物理工学系
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MUKAI Mikio
Semiconductor Technology Academic Research Center(STARC)
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Sano Nobuyuki
Institute Of Applied Physics University Of Tsukuba
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Mukai Mikio
Health-care Center Kinki Central Hospital
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Sano N
Univ. Tsukuba Ibaraki Jpn
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NAKAYAMA Noriaki
Semiconductor Technology Academic Research Center(STARC)
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Shimizu Tomo
Institute Of Applied Physics University Of Tsukuba
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Natori K
Univ. Tsukuba Ibaraki Jpn
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Nakayama Noriaki
Semiconductor Technology Academic Research Center
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Nakayama Noriaki
Fujitsu Laboratories Ltd.
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Nakayama Noriaki
Semiconductor Technology Academic Research Center (starc)
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Nakayama Noriaki
Department Of Advanced Materials Science And Engineering Faculty Of Engineering
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Sano Nobuyuki
Univ. Tsukuba Ibaraki Jpn
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ISHIHARA Takamitsu
Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation
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Kusaka Hiroyuki
Institute Of Applied Physics University Of Tsukuba
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TOMIZAWA Masaaki
NTT LSI Laboratories
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HIROKI Akira
Semiconductor Technology Academic Research Center (STARC)
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Uehara Tsuyoshi
Institute Of Applied Physics University Of Tsukuba
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TORIYAMA Shuichi
Advanced LSI Technology Laboratory, Toshiba Corporation
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Toriyama Shuichi
Advanced Lsi Technology Laboratory Toshiba Corporation
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Tomizawa Masaaki
Ntt Lifestyle And Environmental Technology Labs
著作論文
- Influence of Thermal Noise on Drain Current in Very Small Si-MOSFETs
- Influence of Intrinsic Current Fluctuation in Very Small Si-MOSFETs
- Current Fluctuation Characteristic of Sub-0.1 Micron Device Structures:A Monte Carlo Study
- Coulomb and Phonon Scattering Processes in Metal-Oxide-Semiconductor Inversion Layers : Beyond Matthiessen's Rule
- Minimum Value of the Specific Contact Resistance of Si-Metal Contacts : The Origin and the Magnitude
- Transport Characteristics of the Cross Junction of Atomic Chains
- Probability Distribution of Threshold Voltage Fluctuations in Metal-OXide-Semiconductor Field-Effect-Transistors : Semiconductors
- A Monte Carlo Study of Current-Voltage Characteristics of the Scaled-Down single-Electron Transistor with a Silicon Rectangular Parallelepiped Quantum Dot
- Detailed Balance in Quasi-Ballistic Electron Transport under Nanoscale Device Structures
- Schottky Barrier MOSFETs as Resonant Tunneling Devices
- The Resonant Tunneling Mode of a Single Electron Transistor
- Statistical Threshold Fluctuations in Si-MOSFETs : Jellium vs. Atomistic Dopant Variations