Transport Characteristics of the Cross Junction of Atomic Chains

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-07-15

著者

• Sano N

  Univ. Tsukuba Ibaraki Jpn

• SANO Nobuyuki

  Institute of Applied Physics, University of Tsukuba

• NATORI Kenji

  Institute of Applied Physics, University of Tsukuba

• Shimizu Tomo

  Institute Of Applied Physics University Of Tsukuba

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• Minimum Value of the Specific Contact Resistance of Si-Metal Contacts : The Origin and the Magnitude
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• Schottky Barrier MOSFETs as Resonant Tunneling Devices
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• Statistical Threshold Fluctuations in Si-MOSFETs : Jellium vs. Atomistic Dopant Variations
• Suppression of the rebound of hot-electrons from the drain region in ballistic transport due to device geometry : A Monte Carlo study
• Monte Carlo simulation of nanoscale n-i-n diode : Influence of the hot-electron in drain region on ballistic transport
• Nanoscale Quasi-Ballistic MOSFETs in Reflection-Transmission Model
• Current-Voltage Characteristics of Silicon on Insulator Metal Oxide Semiconductor Field Effect Transistors in Ballistic Mode
• Multi-Subband Effects on Performance Limit of Nanoscale MOSFETs
• Transport Characteristics of the Cross Junction of Atomic Chains

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