Multi-Subband Effects on Performance Limit of Nanoscale MOSFETs
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概要
- 論文の詳細を見る
Multi-subband effects on the performance limit of metal oxide semiconductor field effect transistors (MOSFETs), which is represented by the ballistic MOSFET characteristics, is discussed for room temperature operation. A compact formula of the drain current of ballistic MOSFETs has been derived by the effective one-subband approximation. Consideration of the multi-subband effect, which requires a complicated self-consistent calculation, revises the result and provides a rigorous current value 20% smaller than the conventional estimation. The injection velocity ranges over a narrow region of $1.2--1.6\times 10^{7}$ cm/s. It is equal to the thermal velocity in the weak inversion, but it increases in the strong inversion due to carrier degeneracy. A compact expression for predicting the saturation drain current is derived. The mechanism of current reduction due to the multi-subband effect is discussed.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
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Shimizu Tomo
Institute Of Applied Physics University Of Tsukuba
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Natori Kenji
Institute Of Applied Physics University Of Tsukuba
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IKENOBE Tsuyoshi
Institute of Applied Physics, University of Tsukuba
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Ikenobe Tsuyoshi
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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