Multi-Subband Effects on Performance Limit of Nanoscale MOSFETs
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-30
著者
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NATORI Kenji
Institute of Applied Physics, University of Tsukuba
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Shimizu Tomo
Institute Of Applied Physics University Of Tsukuba
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IKENOBE Tsuyoshi
Institute of Applied Physics, University of Tsukuba
関連論文
- Influence of Intrinsic Current Fluctuation in Very Small Si-MOSFETs
- Current Fluctuation Characteristic of Sub-0.1 Micron Device Structures:A Monte Carlo Study
- Minimum Value of the Specific Contact Resistance of Si-Metal Contacts : The Origin and the Magnitude
- Transport Characteristics of the Cross Junction of Atomic Chains
- A Monte Carlo Study of Current-Voltage Characteristics of the Scaled-Down single-Electron Transistor with a Silicon Rectangular Parallelepiped Quantum Dot
- Multi-Subband Effects on Performance Limit of Nanoscale MOSFETs
- The Resonant Tunneling Mode of a Single Electron Transistor
- Statistical Threshold Fluctuations in Si-MOSFETs : Jellium vs. Atomistic Dopant Variations
- Suppression of the rebound of hot-electrons from the drain region in ballistic transport due to device geometry : A Monte Carlo study
- Monte Carlo simulation of nanoscale n-i-n diode : Influence of the hot-electron in drain region on ballistic transport
- Nanoscale Quasi-Ballistic MOSFETs in Reflection-Transmission Model
- Current-Voltage Characteristics of Silicon on Insulator Metal Oxide Semiconductor Field Effect Transistors in Ballistic Mode
- Multi-Subband Effects on Performance Limit of Nanoscale MOSFETs
- Transport Characteristics of the Cross Junction of Atomic Chains