Monte Carlo simulation of nanoscale n-i-n diode : Influence of the hot-electron in drain region on ballistic transport
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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NATORI Kenji
Institute of Applied Physics, University of Tsukuba
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Natori Kenji
Institute Of Applied Physics University Of Tsukuba
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Kurusu Takashi
Institute Of Applied Physics University Of Tsukuba
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