The Capacitance of Nano-Structures
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概要
- 論文の詳細を見る
- 1995-08-21
著者
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Natori Kenji
Institute Of Applied Physics University Of Tsukuba
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OHBA Teruhiro
Institute of Applied Physics, University of Tsukuba
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Ohba Teruhiro
Institute Of Applied Physics University Of Tsukuba
関連論文
- Influence of Intrinsic Current Fluctuation in Very Small Si-MOSFETs
- Current Fluctuation Characteristic of Sub-0.1 Micron Device Structures:A Monte Carlo Study
- Minimum Value of the Specific Contact Resistance of Si-Metal Contacts : The Origin and the Magnitude
- A Monte Carlo Study of Current-Voltage Characteristics of the Scaled-Down single-Electron Transistor with a Silicon Rectangular Parallelepiped Quantum Dot
- The Resonant Tunneling Mode of a Single Electron Transistor
- Statistical Threshold Fluctuations in Si-MOSFETs : Jellium vs. Atomistic Dopant Variations
- Suppression of the rebound of hot-electrons from the drain region in ballistic transport due to device geometry : A Monte Carlo study
- Monte Carlo simulation of nanoscale n-i-n diode : Influence of the hot-electron in drain region on ballistic transport
- Nanoscale Quasi-Ballistic MOSFETs in Reflection-Transmission Model
- Current-Voltage Characteristics of Silicon on Insulator Metal Oxide Semiconductor Field Effect Transistors in Ballistic Mode
- The Capacitance of Nano-Structures
- New Monte Carlo Simulation Technique for Quasi-Ballistic Transport in Ultrasmall Metal Oxide Semiconductor Field-Effect Transistors
- New Magnetic Flash Memory with FePt Magnetic Floating Gate
- Multi-Subband Effects on Performance Limit of Nanoscale MOSFETs
- Capacitance of Nanostructures
- Transport Characteristics of the Cross Junction of Atomic Chains
- New Solution to High-Field Transport in Semiconductors: I. Elastic Scattering without Energy Relaxation
- New Solution to High-Field Transport in Semiconductors: II. Velocity Saturation and Ballistic Transmission
- Capacitance of Nanostructures