Statistical Threshold Fluctuations in Si-MOSFETs : Jellium vs. Atomistic Dopant Variations

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概要

• 論文の詳細を見る
• 2000-08-28

著者

• SANO Nobuyuki

  Institute of Applied Physics, University of Tsukuba

• NATORI Kenji

  Institute of Applied Physics, University of Tsukuba

• Sano Nobuyuki

  Institute Of Applied Physics University Of Tsukuba

• Natori Kenji

  Institute Of Applied Physics University Of Tsukuba

• TOMIZAWA Masaaki

  NTT LSI Laboratories

• Sano Nobuyuki

  Institute Of Applied Physics The University Of Tsukuba

• Tomizawa Masaaki

  Ntt Lifestyle And Environmental Technology Labs

関連論文

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• Influence of Intrinsic Current Fluctuation in Very Small Si-MOSFETs
• Current Fluctuation Characteristic of Sub-0.1 Micron Device Structures:A Monte Carlo Study
• Monte Carlo Analysis of Hot Electron Transport and Impact Ionization in Silicon
• Coulomb and Phonon Scattering Processes in Metal-Oxide-Semiconductor Inversion Layers : Beyond Matthiessen's Rule
• Minimum Value of the Specific Contact Resistance of Si-Metal Contacts : The Origin and the Magnitude
• Transport Characteristics of the Cross Junction of Atomic Chains
• Probability Distribution of Threshold Voltage Fluctuations in Metal-OXide-Semiconductor Field-Effect-Transistors : Semiconductors
• InAlAs/InGaAs Heterojunction Bipolar Transistors with an n-doped InGaAs Spacer
• Accurate Evaluation of Silicon Planar Doping in InAlAs for InAlAs/InGaAs Modulation Doped Structure Grown by Metal Organic Chemical Vapor Deposition
• A Monte Carlo Study of Current-Voltage Characteristics of the Scaled-Down single-Electron Transistor with a Silicon Rectangular Parallelepiped Quantum Dot
• Multi-Subband Effects on Performance Limit of Nanoscale MOSFETs
• Detailed Balance in Quasi-Ballistic Electron Transport under Nanoscale Device Structures
• Schottky Barrier MOSFETs as Resonant Tunneling Devices
• The Resonant Tunneling Mode of a Single Electron Transistor
• Statistical Threshold Fluctuations in Si-MOSFETs : Jellium vs. Atomistic Dopant Variations
• General-Purpose Device Simulation System with an Effective Graphic Interface
• Suppression of the rebound of hot-electrons from the drain region in ballistic transport due to device geometry : A Monte Carlo study
• Monte Carlo simulation of nanoscale n-i-n diode : Influence of the hot-electron in drain region on ballistic transport
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• Analysis of Photon-Induced Drain Current in Polycrystalline-Silicon Thin-Film Transistors
• Monte Carlo Study of Charge Injection Transistors (CHINTs)
• Simulation of Emitter Size Effects in the Coupled-Quantum-Well Base Resonant Tunneling Transistor
• Two-dimensional Analysis of Resonant Tunneling Using the Time-dependent Schrodinger Equation
• A System for 3D Simulation of Complex Si and Heterostructure Devices (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))
• Three-Dimensional Monte Carlo Simulation of Electron Transport in Si Including Full Coulomb Interaction
• Photoluminescence of Si_Ge_ Quantum Wells Grown on (100)Si by Low-Pressure Chemical Vapor Deposition
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• A New Grain Boundary Model for Drift-Diffusion Device Simulations in Polycrystalline Silicon Thin-Film Transistors
• Monte Carlo Simulation of Response Time for Velocity Modulation Transistors
• The Capacitance of Nano-Structures
• Experimentally Verified Majority and Minority Mobilities in Heavily Doped GaAs for Device Simulations
• Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-$k$ P-Channel Field Effect Transistors Using Ion-Beam W
• New Monte Carlo Simulation Technique for Quasi-Ballistic Transport in Ultrasmall Metal Oxide Semiconductor Field-Effect Transistors
• New Magnetic Flash Memory with FePt Magnetic Floating Gate
• Multi-Subband Effects on Performance Limit of Nanoscale MOSFETs
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• Transport Characteristics of the Cross Junction of Atomic Chains
• New Solution to High-Field Transport in Semiconductors: I. Elastic Scattering without Energy Relaxation
• Coulomb and Phonon Scattering Processes in Metal–Oxide–Semiconductor Inversion Layers: Beyond Matthiessen's Rule
• New Solution to High-Field Transport in Semiconductors: II. Velocity Saturation and Ballistic Transmission
• Capacitance of Nanostructures

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