Current Fluctuation Characteristic of Sub-0.1 Micron Device Structures:A Monte Carlo Study

スポンサーリンク

概要

著者

関連論文

不純物に起因するポテンシャル揺らぎの電子移動度への影響
統計的解析によるPoly-Si TFTの結晶粒界の影響の評価(プロセス・デバイス・回路シミュレーション及び一般)
統計的解析によるPoly-Si TFTの結晶粒界の影響の評価(プロセス・デバイス・回路シミュレーション及び一般)
デバイス・シミュレーションとその物理
不純物に起因するポテンシャル揺らぎの電子移動度への影響
Influence of Thermal Noise on Drain Current in Very Small Si-MOSFETs
Influence of Intrinsic Current Fluctuation in Very Small Si-MOSFETs
Current Fluctuation Characteristic of Sub-0.1 Micron Device Structures:A Monte Carlo Study
微細デバイスにおける電流ゆらぎシミュレーションのデバイス・サイズ依存性
微細デバイスにおける電流ゆらぎシミュレーションのデバイス・サイズ依存性
微細デバイスにおける電流ゆらぎシミュレーションのデバイス・サイズ依存性
微細デバイスにおける電流ゆらぎシミュレーションのデバイス・サイズ依存性
28p-G-2 極微細デバイス構造のもとでの電流ゆらぎのシミュレーション解析II
Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits
Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation
Coulomb and Phonon Scattering Processes in Metal-Oxide-Semiconductor Inversion Layers : Beyond Matthiessen's Rule
Minimum Value of the Specific Contact Resistance of Si-Metal Contacts : The Origin and the Magnitude
Transport Characteristics of the Cross Junction of Atomic Chains
Probability Distribution of Threshold Voltage Fluctuations in Metal-OXide-Semiconductor Field-Effect-Transistors : Semiconductors
Mortality and Causes of Death among Japanese School Personnel between 1992 and 1996
A Monte Carlo Study of Current-Voltage Characteristics of the Scaled-Down single-Electron Transistor with a Silicon Rectangular Parallelepiped Quantum Dot
Multi-Subband Effects on Performance Limit of Nanoscale MOSFETs
Detailed Balance in Quasi-Ballistic Electron Transport under Nanoscale Device Structures
Schottky Barrier MOSFETs as Resonant Tunneling Devices
The Resonant Tunneling Mode of a Single Electron Transistor
Statistical Threshold Fluctuations in Si-MOSFETs : Jellium vs. Atomistic Dopant Variations
Suppression of the rebound of hot-electrons from the drain region in ballistic transport due to device geometry : A Monte Carlo study
Monte Carlo simulation of nanoscale n-i-n diode : Influence of the hot-electron in drain region on ballistic transport
Nanoscale Quasi-Ballistic MOSFETs in Reflection-Transmission Model
Analysis of Photon-Induced Drain Current in Polycrystalline-Silicon Thin-Film Transistors
Three-Dimensional Monte Carlo Simulation of Electron Transport in Si Including Full Coulomb Interaction
Current-Voltage Characteristics of Silicon on Insulator Metal Oxide Semiconductor Field Effect Transistors in Ballistic Mode
A New Design Scheme for Logic Circuits with Single Electron Transistors
A New Grain Boundary Model for Drift-Diffusion Device Simulations in Polycrystalline Silicon Thin-Film Transistors
Monte Carlo Simulation of Sub-0.1μm Devices with Schottky Contact Model (Special lssue on SISPAD'99)
The Capacitance of Nano-Structures
Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness
Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness
Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-$k$ P-Channel Field Effect Transistors Using Ion-Beam W
Unified Reaction--Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect
New Monte Carlo Simulation Technique for Quasi-Ballistic Transport in Ultrasmall Metal Oxide Semiconductor Field-Effect Transistors
New Magnetic Flash Memory with FePt Magnetic Floating Gate
Multi-Subband Effects on Performance Limit of Nanoscale MOSFETs
Capacitance of Nanostructures
Transport Characteristics of the Cross Junction of Atomic Chains
New Solution to High-Field Transport in Semiconductors: I. Elastic Scattering without Energy Relaxation
Coulomb and Phonon Scattering Processes in Metal–Oxide–Semiconductor Inversion Layers: Beyond Matthiessen's Rule
New Solution to High-Field Transport in Semiconductors: II. Velocity Saturation and Ballistic Transmission
Capacitance of Nanostructures

もっと見る

スポンサーリンク