Natori Kenji | Institute Of Applied Physics University Of Tsukuba
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概要
関連著者
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Natori Kenji
Institute Of Applied Physics University Of Tsukuba
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NATORI Kenji
Institute of Applied Physics, University of Tsukuba
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Sano Nobuyuki
Institute Of Applied Physics The University Of Tsukuba
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SANO Nobuyuki
Institute of Applied Physics, University of Tsukuba
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Kurusu Takashi
Institute Of Applied Physics University Of Tsukuba
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Sano Nobuyuki
Institute Of Applied Physics University Of Tsukuba
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Shimizu Tomo
Institute Of Applied Physics University Of Tsukuba
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Natori K
Univ. Tsukuba Ibaraki Jpn
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Ohba Teruhiro
Institute Of Applied Physics University Of Tsukuba
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佐野 伸行
筑波大学物理工学系
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佐野 伸行
筑波大 物理工学系
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MATSUZAWA Kazuya
Semiconductor Technology Academic Research Center(STARC)
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MUKAI Mikio
Semiconductor Technology Academic Research Center(STARC)
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Mukai Mikio
Health-care Center Kinki Central Hospital
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Matsuzawa Kazuya
Semiconductor Technology Academic Research Center (starc)
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Matsuzawa Kazuya
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Corporation
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Matsuzawa Kazuya
Semiconductor Technology Academic Research Center
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Matsuzawa K
Toshiba Corp. Yokohama‐shi Jpn
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Ohba Teruhiro
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
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Natori Kenji
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Sano N
Univ. Tsukuba Ibaraki Jpn
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BEA Ji-Chel
Japan Science and Technology Agency (JST)
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TOMIZAWA Masaaki
NTT LSI Laboratories
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Fukushima Takafumi
Department Of Advanced Materials Chemistry Graduate School Of Engineering Yokohama National Universi
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Uehara Tsuyoshi
Institute Of Applied Physics University Of Tsukuba
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Miyao Masanobu
Department Of Electronics Kyushu University
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IKENOBE Tsuyoshi
Institute of Applied Physics, University of Tsukuba
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Koyanagi Mitsumasa
Department Of Bioengineering And Robotics Graduate School Of Engineering Tohoku University
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OHBA Teruhiro
Institute of Applied Physics, University of Tsukuba
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Tomizawa Masaaki
Ntt Lifestyle And Environmental Technology Labs
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Hong Youn-Gi
Japan Science and Technology Agency (JST), 6-6-01 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Wada Naoya
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Kurusu Takashi
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Yin Cheng-Kuan
Department of Bioengineering and Robotics, Tohoku University, 6-6-01 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Bea Ji-Chel
Japan Science and Technology Agency (JST), 6-6-01 Aza Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
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Ikenobe Tsuyoshi
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Natori Kenji
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
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Sano Nobuyuki
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Miyao Masanobu
Department of Electronics, Kyushu University, 6-10-1 Hakozaki, Higashi-ku, Fukuoka 812-8581, Japan
著作論文
- Influence of Intrinsic Current Fluctuation in Very Small Si-MOSFETs
- Current Fluctuation Characteristic of Sub-0.1 Micron Device Structures:A Monte Carlo Study
- Minimum Value of the Specific Contact Resistance of Si-Metal Contacts : The Origin and the Magnitude
- A Monte Carlo Study of Current-Voltage Characteristics of the Scaled-Down single-Electron Transistor with a Silicon Rectangular Parallelepiped Quantum Dot
- The Resonant Tunneling Mode of a Single Electron Transistor
- Statistical Threshold Fluctuations in Si-MOSFETs : Jellium vs. Atomistic Dopant Variations
- Suppression of the rebound of hot-electrons from the drain region in ballistic transport due to device geometry : A Monte Carlo study
- Monte Carlo simulation of nanoscale n-i-n diode : Influence of the hot-electron in drain region on ballistic transport
- Nanoscale Quasi-Ballistic MOSFETs in Reflection-Transmission Model
- Current-Voltage Characteristics of Silicon on Insulator Metal Oxide Semiconductor Field Effect Transistors in Ballistic Mode
- The Capacitance of Nano-Structures
- New Monte Carlo Simulation Technique for Quasi-Ballistic Transport in Ultrasmall Metal Oxide Semiconductor Field-Effect Transistors
- New Magnetic Flash Memory with FePt Magnetic Floating Gate
- Multi-Subband Effects on Performance Limit of Nanoscale MOSFETs
- Capacitance of Nanostructures
- Transport Characteristics of the Cross Junction of Atomic Chains
- New Solution to High-Field Transport in Semiconductors: I. Elastic Scattering without Energy Relaxation
- New Solution to High-Field Transport in Semiconductors: II. Velocity Saturation and Ballistic Transmission
- Capacitance of Nanostructures