Kurusu Takashi | Institute Of Applied Physics University Of Tsukuba
スポンサーリンク
概要
関連著者
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Natori Kenji
Institute Of Applied Physics University Of Tsukuba
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Kurusu Takashi
Institute Of Applied Physics University Of Tsukuba
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NATORI Kenji
Institute of Applied Physics, University of Tsukuba
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Wada Naoya
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Kurusu Takashi
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Natori Kenji
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
著作論文
- Suppression of the rebound of hot-electrons from the drain region in ballistic transport due to device geometry : A Monte Carlo study
- Monte Carlo simulation of nanoscale n-i-n diode : Influence of the hot-electron in drain region on ballistic transport
- Nanoscale Quasi-Ballistic MOSFETs in Reflection-Transmission Model
- New Monte Carlo Simulation Technique for Quasi-Ballistic Transport in Ultrasmall Metal Oxide Semiconductor Field-Effect Transistors