Capacitance of Nanostructures
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概要
- 論文の詳細を見る
The nanostructure capacitance is analyzed and is shown to consist of three serially connected components; the first one is an extension of the classical capacitance in electrostatics, the second is due to the electronic density of states of the conductor, and the third comes from the electronic charge distribution inside the conductor. The latter two are due to the electronic states inside the conductor, and have only the self-capacitance contribution. A diagrammatic expression of the capacitance is given. As an example, the capacitance-voltage curve for the dual gate silicon on insulator (SOI) metal-oxide-semiconductor (MOS) junction is discussed.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Natori Kenji
Institute Of Applied Physics University Of Tsukuba
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Ohba Teruhiro
Institute Of Applied Physics University Of Tsukuba
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Ohba Teruhiro
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
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Natori Kenji
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
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