Schottky Barrier MOSFETs as Resonant Tunneling Devices

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概要

• 論文の詳細を見る
• 2007-09-19

著者

• SANO Nobuyuki

  Institute of Applied Physics, University of Tsukuba

• Sano Nobuyuki

  Institute Of Applied Physics The University Of Tsukuba

• TORIYAMA Shuichi

  Advanced LSI Technology Laboratory, Toshiba Corporation

• Toriyama Shuichi

  Advanced Lsi Technology Laboratory Toshiba Corporation

関連論文

• Influence of Thermal Noise on Drain Current in Very Small Si-MOSFETs
• Influence of Intrinsic Current Fluctuation in Very Small Si-MOSFETs
• Current Fluctuation Characteristic of Sub-0.1 Micron Device Structures:A Monte Carlo Study
• Coulomb and Phonon Scattering Processes in Metal-Oxide-Semiconductor Inversion Layers : Beyond Matthiessen's Rule
• Minimum Value of the Specific Contact Resistance of Si-Metal Contacts : The Origin and the Magnitude
• Transport Characteristics of the Cross Junction of Atomic Chains
• Probability Distribution of Threshold Voltage Fluctuations in Metal-OXide-Semiconductor Field-Effect-Transistors : Semiconductors
• A Monte Carlo Study of Current-Voltage Characteristics of the Scaled-Down single-Electron Transistor with a Silicon Rectangular Parallelepiped Quantum Dot
• Detailed Balance in Quasi-Ballistic Electron Transport under Nanoscale Device Structures
• Schottky Barrier MOSFETs as Resonant Tunneling Devices
• The Resonant Tunneling Mode of a Single Electron Transistor
• Statistical Threshold Fluctuations in Si-MOSFETs : Jellium vs. Atomistic Dopant Variations
• Schottky-Barrier Metal–Oxide–Semiconductor Field-Effect Transistors as Resonant Tunneling Devices
• Analysis of Photon-Induced Drain Current in Polycrystalline-Silicon Thin-Film Transistors
• Three-Dimensional Monte Carlo Simulation of Electron Transport in Si Including Full Coulomb Interaction
• A New Grain Boundary Model for Drift-Diffusion Device Simulations in Polycrystalline Silicon Thin-Film Transistors
• Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-$k$ P-Channel Field Effect Transistors Using Ion-Beam W
• Transport Characteristics of the Cross Junction of Atomic Chains
• Coulomb and Phonon Scattering Processes in Metal–Oxide–Semiconductor Inversion Layers: Beyond Matthiessen's Rule

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