Detailed Balance in Quasi-Ballistic Electron Transport under Nanoscale Device Structures
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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SANO Nobuyuki
Institute of Applied Physics, University of Tsukuba
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Kusaka Hiroyuki
Institute Of Applied Physics University Of Tsukuba
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Sano Nobuyuki
Institute Of Applied Physics The University Of Tsukuba
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- A Monte Carlo Study of Current-Voltage Characteristics of the Scaled-Down single-Electron Transistor with a Silicon Rectangular Parallelepiped Quantum Dot
- Detailed Balance in Quasi-Ballistic Electron Transport under Nanoscale Device Structures
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