Nakayama Noriaki | Semiconductor Technology Academic Research Center (starc)
スポンサーリンク
概要
関連著者
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Nakayama Noriaki
Fujitsu Laboratories Ltd.
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Nakayama Noriaki
Semiconductor Technology Academic Research Center (starc)
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Nakayama Noriaki
Department Of Advanced Materials Science And Engineering Faculty Of Engineering
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Itoh S
Sony Corporation Research Center
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ISHIBASHI Akira
Sony Corporation Research Center
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NAKAYAMA Norikazu
Sony Corporation Research Center
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ITOH Satoshi
Sony Corporation Research Center
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Ikeda Makoto
Faculty Of Technology Tokyo University Of Agriculture And Technology
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Ikeda M
Sony Corporation Research Center
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Ikeda Masao
Sony Corporation Research Center
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Ikeda M
Toshiba Corp. Yokohama Jpn
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OKUYAMA Hiroyuki
Sony Corporation Research Center
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Ishibashi A
Sony Corporation Research Center
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Nara Yasuo
Department Of Pharmacy School Of Pharmacy Shujitsu University
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Nara Yasuo
就実大学 薬学部応用薬学
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Nara Yasuo
武庫川女子大学
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Mori Y
Research Center For Ultra-precision Science And Technology Graduate School Of Engineering Osaka Univ
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Mori Yusuke
Graduate School of Engineering, Osaka University
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Yamori Y
Institute For World Health Development Mukogawa Women's University
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Itakura T
Fujitsu Lab. Ltd. Atsugi Jpn
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Mori Yoshihiro
Ulsi Process Technology Development Center Semiconductor Company Matsushita Electronics Corp.
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Ikeda M
Tdk Electronic Device Business Group Akita Jpn
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SUGITA Yoshihiro
Fujitsu Laboratories Ltd.
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Nara Y
Univ. East Asia Shimonoseki Jpn
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Nara Yasuo
Fujitsu Laboratories Ltd.
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Mori Y
Osaka Univ. Suita Jpn
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Inayoshi Muneto
Department Of Quantum Engineering School Of Engineering Nagoya Univeristy
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Sugita Yutaka
Research Institute Of Electrical Communication Tohoku University
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Sugita Yutaka
Hitachi Research Laboratory Hitachi Lid.
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Nakayama Noriaki
Fujitsu Laboratories Lid.
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Sugita Y
Department Of Physics Toyama University
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Ito M
Wakayama Univ. Wakayama Jpn
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OHATA Toyoharu
Sony Corporation Research Center
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MORI Yoshifumi
Sony Corporation Research Center
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Ikeda M
Toshiba Corp. Kawasaki Jpn
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Ohata T
Sony Corporation Research Center
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Okuyama H
Sony Corporation Research Center
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Mori Yuzo
Department Of Mechanical Engineering Kochi National College Of Technology
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Kosuge Koji
Department Of Chemistry Faculty Of Science Kyoto University
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Kosuge K
Division Of Chemistry Graduate School Of Science Kyoto University
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Kosuge Koji
Department Of Chemistry Kyoto University
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Nakano K
Tohoku Univ. Sendai Jpn
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Nakano Kazushi
Sony Corporation Research Center
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ITO Takashi
Fujitsu Laboratories Ltd.
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NAKAYAMA Noriaki
Department of Advanced Materials Science and Engineering, Faculty of Engineering, Yamaguchi Universi
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Nakano Kenji
Institure For Materials Research Tohoku University
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TSUCHIYA Yasuaki
Division of Chemistry, Graduate School of Science, Kyoto University
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Yamaguchi Sadaei
Institute For Materials Research Tohoku University
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OZAWA Masafumi
Sony Corporation Research Center
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Nakano K
Department Of Applied Science For Electronics And Materials Graduate School Of Engineering Sciences
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Ozawa M
Department Of Physical Electronics Tokyo Institute Of Technology
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Ozawa Masafumi
Department Of Physical Electronics Tokyo Institute Of Technology
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佐野 伸行
筑波大学物理工学系
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SANO Nobuyuki
Institute of Applied Physics, University of Tsukuba
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MATSUZAWA Kazuya
Semiconductor Technology Academic Research Center(STARC)
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NAKAYAMA Noriaki
Semiconductor Technology Academic Research Center(STARC)
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TSUCHIYA Yasuaki
Department of Chemistry, Faculty of Science, Kyoto University
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YAMAGUCHI Sadae
Institute for Materials Research, Tohoku University
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Nakayama Noriaki
Semiconductor Technology Academic Research Center
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Matsuzawa Kazuya
Semiconductor Technology Academic Research Center (starc)
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Matsuzawa Kazuya
Advanced Lsi Technology Laboratory Research & Development Center Toshiba Corporation
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Matsuzawa Kazuya
Semiconductor Technology Academic Research Center
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Matsuzawa K
Toshiba Corp. Yokohama‐shi Jpn
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Sano Nobuyuki
Institute Of Applied Physics The University Of Tsukuba
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Yamaguchi Sadae
Institute For Materials Research Tohoku University
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Nagata Shoichi
Dep. Of Materials Sci. And Engineering Muroran Inst. Of Technol. 27-1 Mizumoto-cho Muroran Hokkaido
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Nagata Shoichi
Muroran Inst. Technol. Hokkaido Jpn
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KOSUGE Koji
Department of Chemistry, Faculty of Science, Kyoto University
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Nagata S
Osaka Univ.
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佐野 伸行
筑波大 物理工学系
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NAGATA Shinji
Institute for Chemical Research, Kyoto University
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MUKAI Mikio
Semiconductor Technology Academic Research Center(STARC)
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KOSUGE Koji
Division of Chemistry, Graduate School of Science, Kyoto University
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Mukai Mikio
Health-care Center Kinki Central Hospital
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Kosuge Koji
Department Of Chemistry Faculty Of Science
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IKEDA Yasukuni
Institute for Chemical Research, Kyoto University
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SHIGEMATSU Toshihiko
Department of Chemistry, Faculty of Science, Konan University
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YAMAGUCHI Sadaei
Institute for Materials Research, Tohoku University
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Takahiro Katsumi
Institute for Materials Research, Tohoku University
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TAMADA Satoru
Department of Chemistry, Faculty of Science, Kyoto University
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KOSUGE Kouji
Department of Chemistry, Faculty of Science, Kyoto University
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HIROKI Akira
Semiconductor Technology Academic Research Center (STARC)
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Nakayama Noriaki
Department Of Advanced Materials Science And Engineering Faculty Of Engineering Yamaguchi University
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Itakura Toru
Fujitsu Laboratories Ltd.
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Saito T
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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MATSUMOTO Satoshi
Sony Corporation Research Center
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NAGAI Masaharu
Sony Corporation Research Center
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TOMIYA Shigetaka
Sony Corporation Research Center
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NAKAJIMA Anri
Fujitsu Laboratories Ltd.
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Nakajima A
Kaneka Corporation
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Itakura Toru
Fujitsu Laboratories Ltd
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Kijima Satoru
Sony Corporation Research Center
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Nagata S
Tohoku University
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Ikeda Y
Hitachi Ltd. Ibaraki Jpn
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Nasu Shoichi
Kanazawa Institute Of Technology
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Takahiro K
Tohoku University
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Takahiro Katsumi
Institute For Materials Research Tohoku University
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Takahiro Katsumi
Department Of Electrical Engineering Hiroshima University
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Shigematsu Toshihiko
Department Of Chemistry Faculty Of Science Konan University
著作論文
- Influence of Thermal Noise on Drain Current in Very Small Si-MOSFETs
- Non-stoichiometry and Antiferromagnetic Phase Transition of NaCl-type CrN Thin Films Prepared by Reactive Sputtering
- Exchange Anisotropy of CrN_x/FeN_y/CrN_x Trilayer Thin Films Prepared by Reactive Sputtering
- Structural Properties of Amorphous Carbon Nitride Films Prepared by Reactive RF-Magnetron Sputtering
- Probability Distribution of Threshold Voltage Fluctuations in Metal-OXide-Semiconductor Field-Effect-Transistors : Semiconductors
- Room-Temperature Operation of ZnSe-Active-Layer and ZnCdSe-Active-Layer Laser Diodes
- RT Operation of ZnSe-Active-Layer and ZnCdSe-Active-Layer Laser Diodes
- ZnCdSe/ZnSSe/ZnMgSSe SCH Laser Diode with a GaAs Buffer Layer
- ZnCdSe/ZnSe/ZnMgSSe Separate-Confinement Heterostructure Laser Diode with Various Cd Mole Fractions
- 491-nm ZnCeSe/ZnSe/ZnMgSSe SCH Laser Diode with a Low Operating Voltage
- Quantum-Size Effect from Photoluminescence of Low-Temperature-Oxidized Porous Si
- High-Efficiency ZnCdSe/ZnSSe/ZnMgSSe Green Light-Emitting Diodes
- Synchrotron-Radiation-Induced Modification of Silicon Dioxide Film at Room Temperature : Beam Induced Physics and Chemistry
- Synchrotron-Radiation-Induced Modification of Silicon Dioxide Film at Room Temperature
- Synchrotron Radiation-Assisted Removal of Oxygen and Carbon Contaminants from a Silicon Surface