SUGITA Yoshihiro | Fujitsu Laboratories Ltd.

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概要

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著作論文

X-Ray Reflectometry and Infrared Analysis of Native Oxides on Si (100) Formed by Chemical Treatment
Transient Oxide Layer at a Thermally Grown SiO_2/Si Interface, Interpreted Based on Local Vibration and X-Ray Reflectivity
X-Ray Reflectometry and Infrared Analysis of Native Oxides on Si(100) Formed in Chemical Treatment
Characterization of HfO_2 Films Prepared on Various Surfaces for Gate Dielectrics(High-κ Gate Dielectrics)
Characterization of HfO_2 Films Prepared on Various Surfaces for Gate Dielectrics
Thermal Stability of the Yttrium Aluminate Film and the Suppression of its structural change and electrical properties degradation
Quantum-Size Effect from Photoluminescence of Low-Temperature-Oxidized Porous Si
High-Density Layer at the SiO_2/Si Interface Observed by Difference X-Ray Reflectivity
High-Accuracy X-ray Reflectivity Study of Native Oxide Formed in Chemical Treatment
Electrical Properties of SiN/HfO_2/SiON Gate Stacks with High Thermal Stability(High-κ Gate Dielectrics)
Synchrotron-Radiation-Induced Modification of Silicon Dioxide Film at Room Temperature : Beam Induced Physics and Chemistry
Synchrotron-Radiation-Induced Modification of Silicon Dioxide Film at Room Temperature
Synchrotron Radiation-Assisted Removal of Oxygen and Carbon Contaminants from a Silicon Surface
Evaluation of Photoemitted Current from SiO_2 Film on Silicon During Synchrotron Radiation Irradiation
Synchrotron Radiation-Assisted Silicon Film Growth by Irradiation Parallel to the Substrate
Effect of Silicon Surface Conditions before Cobalt-Silicidation on Ultra Shallow p^+-n Junction Properties
Effects of Reaction Product During Hydrogenation of Si Surfaces in HF Solution
Influence of Microscopic Chemical Reactions on the Preparation of an Oxide-Free Silicon Surface in a Fluorine-Based Solution
Influence of Microscopic Chemical Reaction on the Preparation of Oxide Free Silicon Surface in Fluorine-Based Solution
Effects of Reaction Product During Hydrogenation of Si Surfaces in HF Solution
Structural Changes of Y2O3 and La2O3 Films by Heat Treatment
Si Quantum Dot Formation with Low-Pressure Chemical Vapor Deposition
In Situ Infrared Spectroscopy on the Wet Chemical Oxidation of Hydrogen-Terminated Si Surfaces
Diffusion Coefficient of As and P in HfO2
Diffusion Coefficient of As and P in HfO2

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