In Situ Infrared Spectroscopy on the Wet Chemical Oxidation of Hydrogen-Terminated Si Surfaces
スポンサーリンク
概要
- 論文の詳細を見る
In situ infrared spectroscopy was used to observe the early stage of oxidation on hydrogen-terminated Si(100) and (111) in solution. The observation confirmed that the oxidation starts with the insertion reaction of oxygen atoms to the back bonds of the topmost silicon atoms in H2O2 solution. It was found both that the back bond and Si–H bond were oxidized in ozonized water. The dependence of the oxidation reaction of the Si–H bond and its back bond on surface orientation was discussed and the evidence of island growth of the oxide film was shown.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-06-15
著者
-
SUGITA Yoshihiro
Fujitsu Laboratories Ltd.
-
Watanabe Satoru
Fujita Health University
-
Sugita Yoshihiro
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, 243-01 Atsugi, Japan
関連論文
- X-Ray Reflectometry and Infrared Analysis of Native Oxides on Si (100) Formed by Chemical Treatment
- Transient Oxide Layer at a Thermally Grown SiO_2/Si Interface, Interpreted Based on Local Vibration and X-Ray Reflectivity
- X-Ray Reflectometry and Infrared Analysis of Native Oxides on Si(100) Formed in Chemical Treatment
- Characterization of HfO_2 Films Prepared on Various Surfaces for Gate Dielectrics(High-κ Gate Dielectrics)
- Characterization of HfO_2 Films Prepared on Various Surfaces for Gate Dielectrics
- Wafer Cleaning with Photoexcited Chlorine and Thermal Treatment for High-Quality silicon Epitaxy : Beam Induced Physics and Chemistry
- Thermal Stability of the Yttrium Aluminate Film and the Suppression of its structural change and electrical properties degradation
- Quantum-Size Effect from Photoluminescence of Low-Temperature-Oxidized Porous Si
- High-Density Layer at the SiO_2/Si Interface Observed by Difference X-Ray Reflectivity
- High-Accuracy X-ray Reflectivity Study of Native Oxide Formed in Chemical Treatment
- Silicon-Monohydride Termination of Silicon-111 Surface Formed by Boiling Water
- Electrical Properties of SiN/HfO_2/SiON Gate Stacks with High Thermal Stability(High-κ Gate Dielectrics)
- Synchrotron-Radiation-Induced Modification of Silicon Dioxide Film at Room Temperature : Beam Induced Physics and Chemistry
- Synchrotron-Radiation-Induced Modification of Silicon Dioxide Film at Room Temperature
- Synchrotron Radiation-Assisted Removal of Oxygen and Carbon Contaminants from a Silicon Surface
- IrO_2/Pb(Zr,Ti)O_3/Pt Capacitor Degradation with D_2 Gas at Elevated Temperature
- Mechanism of Vestibular Adaptation of Fish under Microgravity
- Mechanism of Vestibular Adaptation of Fish under Microgravity (特集:日本の宇宙生物学実験)
- Atomic Step Structure on Vicnal H/Si(111) Surface Formed by Hot Water Immersion
- Large Desorption Yield of Hydrogen Atoms from Silicon Surface in Homogeneous Electron Injection
- Evaluation of Photoemitted Current from SiO_2 Film on Silicon During Synchrotron Radiation Irradiation
- Synchrotron Radiation-Assisted Silicon Film Growth by Irradiation Parallel to the Substrate
- Effect of Silicon Surface Conditions before Cobalt-Silicidation on Ultra Shallow p^+-n Junction Properties
- Effects of Reaction Product During Hydrogenation of Si Surfaces in HF Solution
- Influence of Microscopic Chemical Reactions on the Preparation of an Oxide-Free Silicon Surface in a Fluorine-Based Solution
- Influence of Microscopic Chemical Reaction on the Preparation of Oxide Free Silicon Surface in Fluorine-Based Solution
- Effects of Reaction Product During Hydrogenation of Si Surfaces in HF Solution
- Fluorine Adsorption and Etching on Si(111):SiH Surface during Immersion in HF Solution
- Fabrication of CoSi2-Buried-Metal-Layer Si Substrates for Infrared Reflection Absorption Spectroscopy by Wafer-Bonding
- Observation of Solution/Si Interface Using IR Spectrochemical Cell During Wet Chemical Oxidation
- Generation of a New Interface State Associated with Ultrathin Gate Dielectrics/Silicon under Electric Stress
- Structural Changes of Y2O3 and La2O3 Films by Heat Treatment
- Mn2O3 Slurry Reuse by Circulation Achieving High Constant Removal Rate
- Mn2O3 Slurry Achieving Reduction of Slurry Waste
- Chemical Structure of Nitrogen Atoms in Thin-Film Nitrided Silicon Dioxide Formed on Silicon Substrate after Hydrogenation Reaction in Hydrofluoric Acid
- Si Quantum Dot Formation with Low-Pressure Chemical Vapor Deposition
- In Situ Infrared Spectroscopy on the Wet Chemical Oxidation of Hydrogen-Terminated Si Surfaces
- Diffusion Coefficient of As and P in HfO2
- Wafer Cleaning with Photoexcited Chlorine and Thermal Treatment for High-Quality Silicon Epitaxy
- Diffusion Coefficient of As and P in HfO2