Fabrication of CoSi2-Buried-Metal-Layer Si Substrates for Infrared Reflection Absorption Spectroscopy by Wafer-Bonding
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概要
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Infrared reflection absorption spectroscopy (IRRAS) using buried metal layer substrates (BML) is one of the high resolution and high sensitive surface vibration spectroscopy techniques. A unique characteristic is the wide frequency range including the so-called finger print region. The CoSi2 Si(100) BML substrates fabricated by Co ion implantation have been used to date. However, the technique has several problems such as the resultant surface roughness due to the ion implantation damage. To solve these problems, in this work, we have examined the fabrication of BML substrates with atomic-level flat surfaces by the wafer-bonding between a Co deposited Si(100) wafer and a Si on insulator (SOI) wafer. Self-assembled alkyl monolayers (SAMs) of octadecyltrichlorosilane and octenyltrichlorosilane were deposited on the fabricated BML substrate surface. Good BML-IRRAS spectra were observed in the wide frequency range from stretching to bending regions. It was also found that well-ordered SAMs were deposited.
- 2003-06-15
著者
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Tabe Michiharu
Research Institue Of Electronics Shizuoka University
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URISU Tsuneo
The Graduate University for Advanced Studies, Institute for Molecular Science
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YAMAMURA Shusaku
The Graduate University for Advanced Studies, Institute for Molecular Science
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YAMAUCHI Shouichi
DENSO Research Laboratories
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KASAI Toshio
Graduate School of Science and Engineering, Saitama University
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Nonogaki Youichi
The Graduate University For Advanced Studies Institute For Molecular Science
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Watanabe Satoru
Fujita Health University
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Watanabe Satoru
Fujitsu Laboratories Ltd., 10-1 Morinosato, Wakamiya, Atsugi 243-0198, Japan
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Nonogaki Youichi
The Graduate University for Advanced Studies, Institute for Molecular Science, Myodaiji, Okazaki 444-8585, Japan
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Yamamura Shusaku
The Graduate University for Advanced Studies, Institute for Molecular Science, Myodaiji, Okazaki 444-8585, Japan
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Kasai Toshio
Graduate School of Science and Engineering, Saitama University, Simo-Okubo, Urawa, Saitama 338-8570, Japan
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Yamauchi Shouichi
DENSO Research Laboratories, 500-1 Minamiyama, Komenoki-cho, Nisshin, Aichi 470-0111, Japan
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