Shrinking of Spin-On-Glass Films Induced by Synchrotron Radiation and Its Application to Three-Dimensional Microfabrications

概要

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Photoinduced etching of siloxane-type spin-on-glass (SOG) by synchrotron radiation (SR) using a SF6/O2 etching gas and a Co contact mask has been investigated. The SOG film was etched by direct SR irradiation similarly to the case of thermally oxidized SiO2. We found that the indirect exposure to SR caused shrinkage of SOG under the Co mask. The shrinkage depth of SOG was attenuated by the thickness of the Co mask, but not eliminated even by a Co mask 350 nm thick, due to the high-energy photons (${\geq}230$ eV) being transmitted through the mask. The shrinkage phenomenon was successfully applied in the fabrication of a three-dimensional structure of the SOG thin film on Si(100). Atomic force microscopy observations showed that the surfaces were very smooth both on the completely etched Si area and on the shrunken SOG area. We investigated the mechanism of the shrinkage of SOG by Fourier-transform infrared spectroscopy.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2004-06-15