Single-Electron Charging in Phosphorus Donors in Silicon Observed by Low-Temperature Kelvin Probe Force Microscope

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概要

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• Kelvin probe force microscopy (KFM) working at low temperatures (13 K) is used to study local electronic potential fluctuations induced by individual phosphorus donors. Electronic potential maps were measured at the surface of thin phosphorus-doped channel of silicon-on-insulator field-effect transistors for different values of backgate voltage. We observed local changes of the potential profile with increasing backgate voltage, indicating electron injection in the channel. Single-step changes in the depth of the fine potential wells, observed by changing backgate voltage, are ascribed to single-electron charging in individual donors. For clusters of donors, with overlapped potential wells, electron charging occurs gradually, without single-step behavior, as the backgate voltage becomes more positive.

• 2011-08-25

著者

• MORARU Daniel

  Research Institute of Electronics, Shizuoka University

• Tabe Michiharu

  Research Institue Of Electronics Shizuoka University

• Anwar Miftahul

  Research Institute of Electronics, Shizuoka University

• Jablonski Ryszard

  Division of Sensors and Measuring Systems, Faculty of Mechatronics, Warsaw University of Technology

• Mizuno Takeshi

  Research Center Sony Corporation

• Tabe Michiharu

  Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan

• Anwar Miftahul

  Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan

• Nowak Roland

  Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan

• Kawai Yuya

  Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan

• Moraru Daniel

  Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan

• Jablonski Ryszard

  Division of Sensors and Measuring Systems, Warsaw University of Technology, Warsaw 02-525, Poland

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