Capacitance-Voltage Study of Silicon-on-Insulator Structure with an Ultrathin Buried SiO_2 Layer Fabricated by Wafer Bonding

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-07-15

著者

• TABE Michiharu

  Research Institute of Electronics, Shizuoka University

• ISHIKAWA Yasuhiko

  Research Institute of Electronics, Shizuoka University

• Tabe M

  Shizuoka Univ. Hamamatsu Jpn

• Tabe Michiharu

  Research Institue Of Electronics Shizuoka University

• Ishikawa Yasuhiko

  Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information

• Zhang Jianhua

  College Of Economics Osaka Prefecture University

• TSUCHIYA Toshiaki

  Shimane University

• MAKITA Shigenori

  Research Institute of Electronics, Shizuoka University

• ZHANG Jianhua

  Research Institute of Electronics, Shizuoka University

• Zhang Jianhua

  Research Institute Of Electronics Shizuoka University

• Makita Shigenori

  Research Institute Of Electronics Shizuoka University

• Tsuchiya Toshiaki

  Shimane Univ.

関連論文

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• Single-electron transfer in phosphorous-doped Si nanowire FETs
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• Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si,SiGe,その他の電子材料))
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• Fowler-Nordheim Current Oscillations in Si(111)/SiO_2/Twisted-Si(111) Tunneling Structures
• Formation of Nanometer-Scale Dislocation Network Sandwiched by Silicon-on-Insulator Layers
• Charge polarization effect on single-hole-characteristics in a two-dimensional Si multidot structure
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