Tsuchiya Toshiaki | Shimane Univ.

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概要

• TSUCHIYA Toshiakiの詳細を見る
• 同名の論文著者
• Shimane Univ.の論文著者

関連著者

• Tsuchiya Toshiaki

  Shimane Univ.

• Tabe Michiharu

  Research Institue Of Electronics Shizuoka University

• Ishikawa Yasuhiko

  Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information

• TSUCHIYA Toshiaki

  Shimane University

• TABE Michiharu

  Research Institute of Electronics, Shizuoka University

• ISHIKAWA Yasuhiko

  Research Institute of Electronics, Shizuoka University

• Tabe M

  Shizuoka Univ. Hamamatsu Jpn

• Zhang Jianhua

  College Of Economics Osaka Prefecture University

• MAKITA Shigenori

  Research Institute of Electronics, Shizuoka University

• ZHANG Jianhua

  Research Institute of Electronics, Shizuoka University

• Zhang Jianhua

  Research Institute Of Electronics Shizuoka University

• Makita Shigenori

  Research Institute Of Electronics Shizuoka University

• Tabe Michiharu

  Research Institute Of Electronics Shizuoka University

• OHMI Tadahiro

  Tohoku University

• Morita Mizuho

  Osaka Univ.

• Ishikawa Yasuhiko

  Research Institute Of Electronics Shizuoka University

• Ohmi Tadahiro

  Tohoku Univ. Sendai Jpn

• Maegawa Shigeto

  Mitsubishi Electric

• Kosugi Masaaki

  Research Institute Of Electronics Shizuoka University

• Yoshimi Makoto

  Toshiba Corporation

• Demizu Kiyoshi

  Shin'etsu Handotai

• Ohmi Tadahiro

  Tohoku Univ.

• Ishikawa Yasuhiko

  Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan

• Tabe Michiharu

  Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan

• Kosugi Masaaki

  Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan

• Tsuchiya Toshiaki

  Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan

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著作論文

• Capacitance-Voltage Study of Silicon-on-Insulator Structure with an Ultrathin Buried SiO_2 Layer Fabricated by Wafer Bonding
• Effects of Electron Tunneling into a Single-Crystalline Si Layer through an Ultrathin Buried Oxide
• Evaluation of SOI Wafer Quality and Technological Issues to be Solved
• Concentration of Electric Field near Si Dot/Thermally-Grown SiO2 Interface

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