Tabe Michiharu | Research Institute Of Electronics Shizuoka University
スポンサーリンク
概要
関連著者
-
TABE Michiharu
Research Institute of Electronics, Shizuoka University
-
Tabe Michiharu
Research Institue Of Electronics Shizuoka University
-
Tabe Michiharu
Research Institute Of Electronics Shizuoka University
-
田部 道晴
静岡大学電子工学研究所
-
Nuryadi Ratno
Research Institute of Electronics, Shizuoka University
-
ISHIKAWA Yasuhiko
Research Institute of Electronics, Shizuoka University
-
Tabe M
Shizuoka Univ. Hamamatsu Jpn
-
Nuryadi Ratno
Research Institue Of Electronics Shizuoka University
-
Ishikawa Yasuhiko
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
-
Tabe Michiharu
Ntt Lsi Laboratories:(present Address)research Institute Of Electronics Shizuoka University
-
Zhang Jianhua
College Of Economics Osaka Prefecture University
-
Ishikawa Yasuhiko
Research Institute Of Electronics Shizuoka University
-
LIGOWSKI Maciej
Research Institute of Electronics, Shizuoka University
-
Ichiraku Akihiro
Research Institute of Electronics, Shizuoka University
-
Anwar Miftahul
Research Institute of Electronics, Shizuoka University
-
Jablonski Ryszard
Division of Sensors and Measuring Systems, Faculty of Mechatronics, Warsaw University of Technology
-
TSUCHIYA Toshiaki
Shimane University
-
MAKITA Shigenori
Research Institute of Electronics, Shizuoka University
-
ZHANG Jianhua
Research Institute of Electronics, Shizuoka University
-
Ichiraku Akihiro
Research Institute Of Electronics Shizuoka University
-
Zhang Jianhua
Research Institute Of Electronics Shizuoka University
-
Makita Shigenori
Research Institute Of Electronics Shizuoka University
-
Ligowski Maciej
Research Institute Of Electronics Shizuoka University
-
Tsuchiya Toshiaki
Shimane Univ.
著作論文
- Dopant ionization in silicon nanodevices investigated by Kelvin Probe Force Microscope (電子デバイス)
- Thermal Nitridation of Si(111) Surfaces with N_2 Molecules Studied by X-Ray Photoelectron Spectroscopy
- Effects of Electron Tunneling into a Single-Crystalline Si Layer through an Ultrathin Buried Oxide