Concentration of Electric Field near Si Dot/Thermally-Grown SiO2 Interface
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概要
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The dot-induced concentration of electric field was studied by current-voltage ($I$–$V$) measurements of metal-oxide-semiconductor (MOS) diodes containing a high density of Si dots embedded in the gate SiO2. Using a nanometer-scale local oxidation process developed by the authors, single-crystalline Si dots covered with a thermally grown SiO2 were formed on a tunnel SiO$_{2}/n^{+}$-Si substrate. $I$–$V$ measurements through the gate SiO2 ($\sim 20$ nm thick) showed enhancement of the Fowler-Nordheim (FN) tunneling current in comparison with the conventional MOS diode. This phenomenon was ascribed to a strong electric field generated locally near the gate SiO2/Si dot interface, which reflects the ultrasmall curvature of the Si dot. In fact, simulation of the potential distribution provided evidence of the concentration of the electric field.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-03-30
著者
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Tabe Michiharu
Research Institue Of Electronics Shizuoka University
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Ishikawa Yasuhiko
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Kosugi Masaaki
Research Institute Of Electronics Shizuoka University
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Tsuchiya Toshiaki
Shimane Univ.
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Ishikawa Yasuhiko
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan
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Tabe Michiharu
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan
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Kosugi Masaaki
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan
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Tsuchiya Toshiaki
Shimane University, 1060 Nishikawatsu, Matsue 690-8504, Japan
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