Evaluation of SOI Wafer Quality and Technological Issues to be Solved
スポンサーリンク
概要
- 論文の詳細を見る
- 1999-09-20
著者
-
OHMI Tadahiro
Tohoku University
-
Morita Mizuho
Osaka Univ.
-
Ohmi Tadahiro
Tohoku Univ. Sendai Jpn
-
TSUCHIYA Toshiaki
Shimane University
-
Maegawa Shigeto
Mitsubishi Electric
-
Yoshimi Makoto
Toshiba Corporation
-
Demizu Kiyoshi
Shin'etsu Handotai
-
Ohmi Tadahiro
Tohoku Univ.
-
Tsuchiya Toshiaki
Shimane Univ.
関連論文
- Adaptive friction compensation for a high precision stage using synchronous piezoelectric device driver (産業計測制御研究会 計測・センサ応用,モーションコントロール全般)
- Accurate Friction Compensation for a High Precision Stage using a Synchronous Piezoelectric Device Driver
- Control of nitrogen profile in radical nitridation of SiO_2 films
- Concentration of Electric Field near Si Dot/Thermally-Grown SiO_2 Interface
- Capacitance-Voltage Study of Silicon-on-Insulator Structure with an Ultrathin Buried SiO_2 Layer Fabricated by Wafer Bonding
- Effects of Electron Tunneling into a Single-Crystalline Si Layer through an Ultrathin Buried Oxide
- Slip-Free Driving Method for Nonresonant Piezoelectric Actuator
- Highly Reliable Piezoelectric Actuator for Precision Stage System
- P-PW-05 Development of the non-resonance type ultra-sonic motor and its application for XY-stage
- Sub-Nanometer Resolution Ultrasonic Motor for 300 mm Wafer Lithography Precision Stage
- Evaluation of SOI Wafer Quality and Technological Issues to be Solved
- Reliability of parameters of associated base straight line in step height samples : Uncertainty evaluation in step height measurements using nanometrological AFM
- FOREWORD (Special Issue on Scientific ULSI Manufacturing Technology)
- PREFACE
- Concentration of Electric Field near Si Dot/Thermally-Grown SiO2 Interface
- Slip-Free Driving Method for Nonresonant Piezoelectric Actuator
- P-12 Effect of Dissolved Gases on Ultrasonic Cavitation in Liquid(Poster Presentations)