Artificial Dislocation Network in Silicon-on-Insulator Layer for Single-Electron Devices

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概要

• 論文の詳細を見る
• 2005-09-13

著者

• TABE Michiharu

  Research Institute of Electronics, Shizuoka University

• ISHIKAWA Yasuhiko

  Research Institute of Electronics, Shizuoka University

• Tabe Michiharu

  Research Institue Of Electronics Shizuoka University

• Ishikawa Yasuhiko

  Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information

• YAMAMOTO Chihiro

  Research Institute of Electronics, Shizuoka University

関連論文

• Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer (シリコン材料・デバイス)
• Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer (電子デバイス)
• Single-electron transfer in phosphorous-doped Si nanowire FETs
• Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
• Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si,SiGe,その他の電子材料))
• Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
• Fowler-Nordheim Current Oscillations in Si(111)/SiO_2/Twisted-Si(111) Tunneling Structures
• Formation of Nanometer-Scale Dislocation Network Sandwiched by Silicon-on-Insulator Layers
• Charge polarization effect on single-hole-characteristics in a two-dimensional Si multidot structure
• Photoinduced Effects on Single-Charge Tunneling in a Si Two-Dimensional Multidot Field-Effect Transistor
• Artificial Dislocation Network in Silicon-on-Insulator Layer for Single-Electron Devices
• Tunneling current oscillations in Si/SiO_2/Si structures(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
• Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
• Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
• Quantum-Confinement Effect in Ultrathin Si Layer of Silicon-on-Insulator Substrate : Semiconductors
• Single-Electron Transfer by Inter-Dopant Coupling Tuning in Doped Nanowire Silicon-on-Insulator Field-Effect Transistors
• Dopant ionization in silicon nanodevices investigated by Kelvin Probe Force Microscope (シリコン材料・デバイス)
• Dopant ionization in silicon nanodevices investigated by Kelvin Probe Force Microscope (電子デバイス)
• Photo-illumination effects on the Si multiple-tunnel-junction single-hole devices
• Thermal Nitridation of Si(111) Surfaces with N_2 Molecules Studied by X-Ray Photoelectron Spectroscopy
• Scanning Tunneling Microscope Study of (001)InP Surface Prepared by Gas Source Molecular Beam Epitaxy
• In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown (2×4) GaAs Surfaces
• In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-Doped MBE-Grown (2x4) GaAs Surfaces
• Fabrication and Electrical Characteristics of Silicon Quantum Dot Devices
• Light irradiation effect on single-hole-tunneling current of an SOI-FET(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
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• Capacitance-Voltage Study of Silicon-on-Insulator Structure with an Ultrathin Buried SiO_2 Layer Fabricated by Wafer Bonding
• Effects of Electron Tunneling into a Single-Crystalline Si Layer through an Ultrathin Buried Oxide
• In-Situ Scanning Tunneling Microscope Study of Formation Process of Ultrathin Si Layer by Molecular Beam Epitaxy on GaAs(001)-(2×4) Surface
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• Missing-Dimer Structures and Their Kink Defects on Molecular Beam Epitaxially Grown (2×4) Reconstructed (001) InP and GaAs Surfaces Studied by Ultrahigh-Vacuum Scanning Tunneling Microscopy
• Missing-Dimer Structures and Their Kink Defects on MBE-Grown (2x4) Reconstructed (001)Inp Surfaces Studied by UHV Scanning Tunneling Microscope
• Si Pillar Formation and Height Countrol by Furnace Oxidation of the Si (111) Surface with Ultra-Small SiN Nuclei
• Si Pillar Formation and Height Control by Furnace Oxidation of the Si (111) Surface with Ultra-Small SiN Nuclei
• Photon irradiation effects on Si multiple-tunnel-junction field-effect transistors : Sensing the presence of a single-charge in the substrate
• Nanometer-Scale Local Oxidation of Si Using SiN Islands Formed in the Early Stages of Nitridation
• Multi-Charge Turnstile Operation in Random-Multidot Channel FET
• Fabrication of CoSi2-Buried-Metal-Layer Si Substrates for Infrared Reflection Absorption Spectroscopy by Wafer-Bonding
• Light irradiation effect on single-hole-tunneling current of an SOI-FET(結晶成長評価及びデバイス(化合物,Si,SiGe,その他の電子材料))
• Light irradiation effect on single-hole-tunneling current of an SOI-FET(結晶成長評価及びデバイス(化合物,Si, SiGe,その他の電子材料))
• Thermal Agglomeration of Ultrathin Si Layer on Buried SiO_2
• Thermally-Induced Structural Changes of Ultrathin Silicon-on-Insulator Structure
• Simulation of Visible Light Induced Effects in a Tunnel Junction Array for Photonic Device Applications
• Resonant Tunneling Effect in Si/SiO_2 Double Barrier Structure
• Single-Electron Charging in Phosphorus Donors in Silicon Observed by Low-Temperature Kelvin Probe Force Microscope
• Photoirradiation Effects in a Single-Electron Tunnel Junction Array (Special Issue on Technology Challenges for Single Electron Devices)
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• Simulations of Relaxation Processes for Non-Equilibrium Electron Distributions in Two-Dimensional Tunnel Junction Arrays ( Quantum Dot Structures)
• Fabrication of CoSi2-Buried-Metal-Layer Si Substrates for Infrared Reflection Absorption Spectroscopy by Wafer-Bonding
• Photoinduced Effects on Single-Charge Tunneling in a Si Two-Dimensional Multidot Field-Effect Transistor
• Thermal Agglomeration of Ultrathin Silicon-on-Insulator Layers: Crystalline Orientation Dependence
• Concentration of Electric Field near Si Dot/Thermally-Grown SiO2 Interface
• Single-Gated Single-Electron Transfer in Nonuniform Arrays of Quantum Dots
• Fowler–Nordheim Current Oscillations in Si(111)/SiO2/Twisted-Si(111) Tunneling Structures
• Photon-Induced Random Telegraph Signal Due to Potential Fluctuation of a Single Donor-Acceptor Pair in Nanoscale Si p-n Junctions

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