Mattausch Hans | Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
スポンサーリンク
概要
- Mattausch Hans Jurgenの詳細を見る
- 同名の論文著者
- Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japanの論文著者
関連著者
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IIZUKA Takahiro
Semiconductor Technology Academic Research Center
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MIURA-MATTAUSCH Mitiko
Graduate School of Advanced Science of Matter, Hiroshima University
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Miyake Masataka
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Mattausch Hans
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Mattausch Hans
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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TAGUCHI Masahiko
Semiconductor Technology Academic Research Center
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MIYAMOTO Shunsuke
Semiconductor Technology Academic Research Center
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HOSHIDA Teruhiko
Semiconductor Technology Academic Research Center
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Kumashiro Shigetaka
Semiconductor Technology Academic Research Center
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Matsuzawa Kazuya
Semiconductor Technology Academic Research Center
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Navarro Dondee
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Ezaki Tatsuya
Graduate School Of Advanced Science Of Matter Hiroshima University
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Ohguro Tatsuya
Semiconductor Company Toshiba Corporation
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Sadachika Norio
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Ma Chenyue
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Yamaguchi Seiichiro
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Kinoshita Akinari
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Arakawa Takahiko
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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He Jin
Institute of Microelectronics, Peking University, Beijing 100871, China
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Matsuzawa Kazuya
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Miura-Mattausch Mitiko
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Ezaki Tatsuya
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Mizukane Yoshio
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Matsumoto Kenji
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Ohguro Tatsuya
Semiconductor Technology Academic Research Center, 3-17-2 Shin-Yokohama, Minatokita-ku, Yokohama 222-0033, Japan
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Sadachika Norio
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Hoshida Teruhiko
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Navarro Dondee
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Iizuka Takahiro
Semiconductor Technology Academic Research Center, 3-17-2 Shin-Yokohama, Minatokita-ku, Yokohama 222-0033, Japan
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Taguchi Masahiko
Semiconductor Technology Academic Research Center, 3-17-2 Shin-Yokohama, Minatokita-ku, Yokohama 222-0033, Japan
著作論文
- Unified Reaction--Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect
- Surface-Potential-Based Metal–Oxide–Silicon-Varactor Model for RF Applications