Ohguro Tatsuya | Semiconductor Company Toshiba Corporation
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概要
関連著者
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Ohguro Tatsuya
Semiconductor Company Toshiba Corporation
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OHGURO Tatsuya
Semiconductor Technology Academic Research Center
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IIZUKA Takahiro
Semiconductor Technology Academic Research Center
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TAGUCHI Masahiko
Semiconductor Technology Academic Research Center
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Mattausch Hans
Hiroshima Univ. Higashihiroshima‐shi Jpn
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Mattausch Hans
Hiroshima University
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MIYAMOTO Shunsuke
Semiconductor Technology Academic Research Center
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Ohguro Tatsuya
Department Of Physics Faculty Of Science Hokkaido University
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Kumashiro Shigetaka
Semiconductor Technology Academic Research Center
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Mattausch Hans
Research Institute For Nanodevice And Bio Systems Hiroshima University
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Miura‐mattausch M
Hiroshima Univ. Higashi‐hiroshima Jpn
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Matsumoto S
Semiconductor Technology Academic Research Center
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Miura-mattausch Mitiko
Hiroshima-university
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Mattausch Hans
Research Center For Nanodevices And Systems Hiroshima University
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Kumashiro S
Ulsi Device Development Division Nec Corporation
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Navarro Dondee
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Ezaki Tatsuya
Graduate School Of Advanced Science Of Matter Hiroshima University
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Mizoguchi Takeshi
Semiconductor Technology Academic Research Center
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MIURA-MATTAUSCH Mitiko
Graduate School of Advanced Science of Matter, Hiroshima University
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Miyake Masataka
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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ITOH Nobuyuki
Semiconductor Company, Toshiba Corporation
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Feldmann Uwe
Hiroshima Univ. Higashihiroshima‐shi Jpn
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Itoh N
Osaka Prefecture Univ. Osaka Jpn
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NAKAYAMA Noriaki
Semiconductor Technology Academic Research Center(STARC)
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Itoh Nobuyuki
Semiconductor Company Toshiba Corporationthe Authors Are With Semiconductor Company Toshiba Corporat
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Itoh Nobuyuki
Semiconductor Company Toshiba Corp.
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Ueno Hiroki
Department Of Electrical And Electronic Engineering Chuo University
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Katoh Kazuhiro
Semiconductor Company Toshiba Corporation
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MIURA MATTAUSCH
Graduate School of Advanced Sciences of Matter, Hiroshima University
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NAKAYAMA Noriaki
Tokyo Institute of Technology
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SADACHIKA Norio
Hiroshima University
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MIURA-MATTAUSCH Mitiko
Hiroshima University
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Feldmann Uwe
Hiroshima University
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MIYAKE Masataka
Hiroshima University
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HORI Daisuke
Hiroshima University
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EZAKI Tatsuya
Graduate School of Advanced Science of Matter, Hiroshima University
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Ohguro T
Semiconductor Company Toshiba Corporation
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NAKAYAMA Noriaki
Institute for Chemical Research,Kyoto University
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Nakayama Noriaki
Semiconductor Technology Academic Research Center
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Ueno H
Graduate School Of Advanced Sciences Of Matter Hiroshima University:(present Address)matsushita Semi
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Ueno Hiroaki
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Hosokawa Satoshi
Graduate School Of Advanced Sciences Of Matter Hiroshima University:(present Address)ricoh Corporati
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YAMAGUCHI Tetsuya
Semiconductor Technology Academic Research Center
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YAMASHITA Kyoji
Semiconductor Technology Academic Research Center
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MATTAUSCH Mitiko
Graduate School of Advanced Sciences of Matter, Hiroshima University
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MATSUMOTO Shizunori
Graduate School of Advanced Sciences of Matter, Hiroshima University
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KITAMURA Toshihiko
Graduate School of Advanced Sciences of Matter, Hiroshima University
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TAKEDA Youichi
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Miura Mattausch
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Takeda Youichi
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Itoh N
Semiconductor Company Toshiba Corporationthe Authors Are With Semiconductor Company Toshiba Corporat
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KIMIJIMA Hideki
Semiconductor Company,Toshiba Corporation
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Nakayama N
Department Of Advanced Materials Science And Engineering Faculty Of Engineering Yamaguchi University
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Ishizuka S
Semiconductor Company Toshiba Corporation
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CHIBA Shingo
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Chiba Shingo
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Ezaki Tatsuya
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Kojima K
Toshiba Corp. Yokohama‐shi Jpn
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Itoh N
Semiconductor Company Toshiba Corporation
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Kimijima Hideki
Semiconductor Company Toshiba Corporation
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Kitamura Toshihiko
Graduate School Of Advanced Sciences Of Matter Hiroshima University:(present Address)kyocera
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Sadachika Norio
Hiroshima-university
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Sadachika Norio
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Mattausch Hans
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Miura-Mattausch Mitiko
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Ezaki Tatsuya
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Mizukane Yoshio
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Matsumoto Kenji
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Ohguro Tatsuya
Semiconductor Technology Academic Research Center, 3-17-2 Shin-Yokohama, Minatokita-ku, Yokohama 222-0033, Japan
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Ohguro Tatsuya
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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NAVARRO Dondee
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Sadachika Norio
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Mattausch Hans
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Takeda Yoichi
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Minami Takafumi
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Mattausch Hance
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Miyamoto Syunsuke
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Navarro Dondee
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Iizuka Takahiro
Semiconductor Technology Academic Research Center, 3-17-2 Shin-Yokohama, Minatokita-ku, Yokohama 222-0033, Japan
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Iizuka Takahiro
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Taguchi Masahiko
Semiconductor Technology Academic Research Center, 3-17-2 Shin-Yokohama, Minatokita-ku, Yokohama 222-0033, Japan
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Taguchi Masahiko
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
著作論文
- Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors
- 1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation(Semiconductor Materials and Devices)
- Scalable Parasitic Components Model of CMOS for RF Circuit Design
- MOSFET Harmonic Distortion up to the Cutoff Frequency : Measurement and Theoretical Analysis
- Surface-Potential-Based Metal–Oxide–Silicon-Varactor Model for RF Applications
- Frequency Dependence of Measured Metal Oxide Semiconductor Field-Effect Transistor Distortion Characteristic