Miyake Masataka | Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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概要
- Miyake Masatakaの詳細を見る
- 同名の論文著者
- Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japanの論文著者
関連著者
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Miyake Masataka
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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MIURA-MATTAUSCH Mitiko
Graduate School of Advanced Science of Matter, Hiroshima University
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IIZUKA Takahiro
Semiconductor Technology Academic Research Center
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TAGUCHI Masahiko
Semiconductor Technology Academic Research Center
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Ohguro Tatsuya
Semiconductor Company Toshiba Corporation
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Sadachika Norio
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Mattausch Hans
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Mattausch Hans
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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MIYAMOTO Shunsuke
Semiconductor Technology Academic Research Center
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HOSHIDA Teruhiko
Semiconductor Technology Academic Research Center
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Kumashiro Shigetaka
Semiconductor Technology Academic Research Center
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Matsuzawa Kazuya
Semiconductor Technology Academic Research Center
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Navarro Dondee
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Ezaki Tatsuya
Graduate School Of Advanced Science Of Matter Hiroshima University
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Feldmann Uwe
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Kojima Takashi
Electronic Circuit Lab., Toyota Central R&D Labs., Inc., Nagakute, Aichi 480-1192, Japan
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Kajiwara Takahiro
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Miyake Masataka
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Masataka Miyake
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima, Japan 739-8530
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Ma Chenyue
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Yamaguchi Seiichiro
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Kinoshita Akinari
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Arakawa Takahiko
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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He Jin
Institute of Microelectronics, Peking University, Beijing 100871, China
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Hori Daisuke
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Kazuya Matsuzawa
Semiconductor Technology Academic Research Center, Yokohama, 222-0033, Japan
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Matsuzawa Kazuya
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Miura-Mattausch Mitiko
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Mitiko Miura-Mattausch
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima, Japan 739-8530
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Ezaki Tatsuya
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Mizukane Yoshio
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Matsumoto Kenji
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Ohguro Tatsuya
Semiconductor Technology Academic Research Center, 3-17-2 Shin-Yokohama, Minatokita-ku, Yokohama 222-0033, Japan
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Ohguro Tatsuya
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Sadachika Norio
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Norio Sadachika
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima, Japan 739-8530
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Hans-Juergen Mattausch
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima, Japan 739-8530
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Takahiro Iizuka
Semiconductor Technology Academic Research Center, Yokohama, 222-0033, Japan
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Teruhiko Hoshida
Semiconductor Technology Academic Research Center, Yokohama, 222-0033, Japan
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Yasuyuki Sahara
Semiconductor Technology Academic Research Center, Yokohama, 222-0033, Japan
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Toshiro Tsukada
Semiconductor Technology Academic Research Center, Yokohama, 222-0033, Japan
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Hoshida Teruhiko
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Takeda Yoichi
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Minami Takafumi
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Mattausch Hance
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Miyamoto Syunsuke
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Navarro Dondee
Graduate School of Advanced Sciences of Matter, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8530, Japan
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Iizuka Takahiro
Semiconductor Technology Academic Research Center, 3-17-2 Shin-Yokohama, Minatokita-ku, Yokohama 222-0033, Japan
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Iizuka Takahiro
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Taguchi Masahiko
Semiconductor Technology Academic Research Center, 3-17-2 Shin-Yokohama, Minatokita-ku, Yokohama 222-0033, Japan
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Taguchi Masahiko
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Kojima Takashi
Electronic Circuit Lab., Toyota Central R&D Labs., Inc., Nagakute, Aichi 480-1192, Japan
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Yamamoto Takao
Electronics Device Business Unit, DENSO Corporation, Kariya, Aichi 448-8661, Japan
著作論文
- Capability of Electrothermal Simulation for Automotive Power Application Using Novel Laterally Diffused Metal Oxide Semiconductor Model
- Effect of Carrier Transit Delay on Complementary Metal–Oxide–Semiconductor Switching Performance
- Unified Reaction--Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect
- Surface-Potential-Based Metal–Oxide–Silicon-Varactor Model for RF Applications
- Frequency Dependence of Measured Metal Oxide Semiconductor Field-Effect Transistor Distortion Characteristic
- Compact Modeling of Floating-Base Effect in Injection-Enhanced Insulated-Gate Bipolar Transistor Based on Potential Modification by Accumulated Charge (Special Issue : Solid State Devices and Materials)