Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation

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概要

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• We analyze the carrier dynamics in MOSFETs under low-voltage operation. For this purpose the displacement (charging/discharging) current, induced during switching operations is studied experimentally and theoretically for a 90nm CMOS technology. It is found that the experimental transient characteristics can only be well reproduced in the circuit simulation of low voltage applications by considering the carrier-transit delay in the compact MOSFET model. Long carrier transit delay under the low voltage switching-on operation results in long duration of the displacement current flow. On the other hand, the switching-off characteristics are independent of the bias condition.

• （社）電子情報通信学会の論文
• 2009-05-01

著者

• Feldmann Uwe

  Hiroshima Univ. Higashihiroshima‐shi Jpn

• MATSUZAWA Kazuya

  Semiconductor Technology Academic Research Center(STARC)

• Mattausch Hans

  Hiroshima Univ. Higashihiroshima‐shi Jpn

• Mattausch Hans

  Hiroshima University

• SADACHIKA Norio

  Hiroshima University

• MIURA-MATTAUSCH Mitiko

  Hiroshima University

• Feldmann Uwe

  Hiroshima University

• MIYAKE Masataka

  Hiroshima University

• HORI Daisuke

  Hiroshima University

• IIZUKA Takahiro

  Semiconductor Technology Academic Research Center

• SAHARA Yasuyuki

  Semiconductor Technology Academic Research Center

• HOSHIDA Teruhiko

  Semiconductor Technology Academic Research Center

• TSUKADA Toshiro

  Semiconductor Technology Academic Research Center

• Matsuzawa Kazuya

  Semiconductor Technology Academic Research Center

• Mattausch Hans

  Research Institute For Nanodevice And Bio Systems Hiroshima University

• Miura‐mattausch Mitiko

  Hiroshima University

• Miura‐mattausch M

  Hiroshima Univ. Higashi‐hiroshima Jpn

• Sadachika Norio

  Hiroshima-university

• Miura-mattausch Mitiko

  Hiroshima-university

• Tsukada Toshiro

  Semiconductor & Integrated Circuits Group Hitachi Lid.

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