Surface-Potential-Based MOS-Varactor Model for RF Applications
スポンサーリンク
概要
- 論文の詳細を見る
- 2006-09-13
著者
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MIURA MATTAUSCH
Graduate School of Advanced Sciences of Matter, Hiroshima University
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Kumashiro S.
Semiconductor Technology Academic Research Center
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Navarro D.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miura Mattausch
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Miura Mattausch
Hiroshima University
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MIYAKE M.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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SADACHIKA N.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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MIZUKANE Y.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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EZAKI T.
Graduate School of Advanced Sciences of Matter, Hiroshima University
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MATTAUSCH H.
Research Center for Nanodevices and Systems, Hiroshima University
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OHGURO T.
Semiconductor Technology Academic Research Center
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IIZUKA T.
Semiconductor Technology Academic Research Center
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TAGUCHI M.
Semiconductor Technology Academic Research Center
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MIYAMOTO S.
Semiconductor Technology Academic Research Center
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MIYAKE M.
Hiroshima University
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SADACHIKA N.
Hiroshima University
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MATTAUSCH H.
Hiroshima University
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Mizukane Y.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Mattausch H.
Research Center For Nanodevices And Systems Hiroshima University
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Ezaki T.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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