Carrier Transport Model for Lateral p-i-n Photodiodes at High-Frequency Operation
スポンサーリンク
概要
- 論文の詳細を見る
- 2004-09-15
著者
-
MIURA MATTAUSCH
Graduate School of Advanced Sciences of Matter, Hiroshima University
-
Navarro D.
Graduate School Of Advanced Sciences Of Matter Hiroshima University
-
Miura Mattausch
Graduate School Of Advanced Sciences Of Matter Hiroshima University
-
KONNO K.
Graduate School of Advanced Sciences of Matter, Hiroshima University
-
MATSUSHIMA O.
Graduate School of Advanced Sciences of Matter, Hiroshima University
-
HARA K.
Graduate School of Advanced Sciences of Matter, Hiroshima University
-
SUZUKI G.
Graduate School of Advanced Sciences of Matter, Hiroshima University
-
NAVARRO D.
Graduate School of Advanced Sciences of Matter, Hiroshima University
関連論文
- Suppressed short-channel effect of DG-MOSFET and its modeling
- Carrier Transport Model for Lateral p-i-n Photodiode in High-Frequency Operation
- MOSFET Harmonic Distortion up to the Cutoff Frequency : Measurement and Theoretical Analysis
- Carrier Transport Model for Lateral p-i-n Photodiodes at High-Frequency Operation
- Shot Noise Measurement in p-i-n Diode and Its Analysis
- Surface-Potential-Based MOS-Varactor Model for RF Applications
- Enhanced Quantum Effect for Sub-0.1μm Pocket Technologies and Its Relevance for the On-Current Condition
- Frequency Dependence of Measured MOSFET Distortion Characteristic
- M032 Teaching English in English : Searching for a Way to Make It a Reality in the Japanese EFL Classroom(CHALLENGES FOR TERTIARY ENGLISH EDUCATION-JACET's Role in the next Fifty Years)