Modeling of Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor for Accurate Prediction of Junction Condition on Device Characteristics

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概要

• 論文の詳細を見る

• In this paper, an accurate model of resistive drift region in laterally diffused metal oxide semiconductor (LDMOS) is presented. We have improved the dynamically varying depletion width model at the drift/substrate junction, by considering both the drain and substrate bias effects. The both bias condition causes the resistance modification of the high resistive drift region for the reduced-surface-field structure (RESURF). In addition, new expansion-effect model is developed by considering the substrate bias effect. The developed models have been implemented into Hiroshima University starc insulated gate field effect transistor model for high voltage (HiSIM-HV) and it is proved that the models reproduce measured direct current (DC) characteristics for the wide variety of the substrate bias variation.

• 2011-04-25

著者

• Mattausch Hans

  Hiroshima Univ. Higashihiroshima‐shi Jpn

• MIYAKE Masataka

  Hiroshima University

• Kanamoto Toshiki

  Renesas Design Corp.

• Amakawa Shuhei

  Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Miura-Mattausch Michiko

  Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Masuda Hiroo

  Renesas Electronics Corporation, Takasaki, Gunma 370-0021, Japan

• Kanamoto Toshiki

  Renesas Electronics Corporation, Takasaki, Gunma 370-0021, Japan

• Mattausch Hans

  Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Saito Takashi

  Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Tanaka Akihiro

  Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Hayashi Takuro

  Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Kikuchihara Hideyuki

  Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

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