Compact Modeling of the p-i-n Diode Reverse Recovery Effect Valid for both Low and High Current-Density Conditions
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概要
- 論文の詳細を見る
- 2012-10-01
著者
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MIURA-MATTAUSCH Mitiko
Hiroshima University
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MIYAKE Masataka
Hiroshima University
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NAKASHIMA Junichi
Hiroshima University
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- Prediction of Circuit-Performance Variations from Technology Variations for Reliable 100nm SOC Circuit Design
- Compact Modeling of Expansion Effects in LDMOS
- Compact Modeling of the p-i-n Diode Reverse Recovery Effect Valid for both Low and High Current-Density Conditions
- Laterally Diffused Metal Oxide Semiconductor Model for Device and Circuit Optimization
- A GIDL-Current Model for Advanced MOSFET Technologies without Binning
- Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation
- Compact Modeling of the p-i-n Diode Reverse Recovery Effect Valid for both Low and High Current-Density Conditions
- Compact Modeling of Expansion Effects in LDMOS