A New LDMOS Transistor Macro-Modeling for Accurately Predicting Bias Dependence of Gate-Overlap Capacitance
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概要
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We have developed a macro model, which allows us to describe precise LDMOS DC/AC characteristics. Characterization of anomalous gate input capacitance is the key issue in the LDMOS model development. We have newly employed a T-type distributed RC scheme for gate overlapped LDMOS drift region. The bias dependent resistance and capacitance are modeled independently in Verilog-A as R-model and PMOS-capacitance. The dividing factor of the distributed R is introduced to reflect the shield effect of the gate overlap capacitance. Comparison between the new model and measurement results has proven that the developed macro model reproduces accurately not only the gate input capacitance, but also DC characteristics.
- 2010-09-01
著者
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KANAMOTO Toshiki
Renesas Technology Corporation
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Masuda Hiroo
Renesas Technol. Corp. Kodaira‐shi Jpn
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SAITO Takashi
Renesas Technology Corp.
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KOBAYASHI Saiko
Renesas Technology Corp.
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GOTO Nobuhiko
Renesas Technology Corp.
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SATO Takao
Renesas Technology Corp.
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SUGIHARA Hitoshi
Renesas Technology Corp.
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Kanamoto Toshiki
Renesas Design Corp.
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Masuda Hiroo
Renesas Electronics Corporation, Takasaki, Gunma 370-0021, Japan
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