A Method of Precise Estimation of Physical Parameters in LSI Interconnect Structures(Interconnect, <Special Section>VLSI Design and CAD Algorithms)
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概要
- 論文の詳細を見る
This paper proposes a new non-destructive methodology to estimate physical parameters for LSIs. In order to resolve the estimation accuracy degradation issue for low-k dielectric films, we employ a parallel-plate capacitance measurement and a wire resistance measurement in our non-destructive method. Due to (1) the response surface functions corresponding to the parallel-plate capacitance measurement and the wire resistance measurement and (2) the searching of the physical parameter values using our cost function and simulated annealing, the proposed method attains higher precision than that of the existing method. We demonstrate the effectiveness of our method by application to our 90nm SoC process using low-k materials.
- 社団法人電子情報通信学会の論文
- 2005-12-01
著者
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Terai Masayuki
Faculty Of Informatics Osaka Gakuin University
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KANAMOTO Toshiki
Renesas Technology Corporation
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ISHIKAWA Kiyoshi
Renesas Technology Corporation
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SHIROTA Mitsutoshi
Renesas Technology Corp.
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WATANABE Tetsuya
Renesas Technology Corp
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TERAI Masayuki
Osaka Gakuin University
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KUNIKIYO Tatsuya
Renesas Technology Corp
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AJIOKA Yoshihide
Renesas Technology Corp
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HORIBA Yasutaka
Kansai University
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Terai Masayuki
Osaka Gakuin Univ. Suita‐shi Jpn
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Ishikawa Kiyoshi
Renesas Technol. Corp. Itami‐shi Jpn
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Kunikiyo Tatsuya
Mirai‐selete Sagamihara‐shi Jpn
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Kanamoto Toshiki
Mirai‐selete Sagamihara‐shi Jpn
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Kanamoto Toshiki
Renesas Technology Corp.
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Kanamoto Toshiki
Renesas Design Corp.
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