A Reliability-Enhanced TCAM Architecture with Associated Embedded DRAM and ECC(<Special Section>Novel Device Architectures and System Integration Technologies)
スポンサーリンク
概要
- 論文の詳細を見る
This paper describes a novel TCAM architecture designed for enhancing the soft-error immunity. An associated embedded DRAM and ECC circuits are placed next to TCAM macro to implement a unique methodology of recovering upset bits due to soft errors. The proposed configuration allows an improvement of soft-error immunity by 6 orders of magnitude compared with the conventional TCAM. We also propose a novel testing methodology of the soft-error rate with a fast parallel multi-bit test. In addition, the proposed architecture resolves the critical problem of the look-up table maintenance of TCAM. The design techniques reported in this paper are especially attractive for realizing soft-error immune, high-performance TCAM chips.
- 社団法人電子情報通信学会の論文
- 2006-11-01
著者
-
ARIMOTO Kazutami
Renesas Technology
-
MORISHITA Fukashi
Renesas Technology Corp.
-
NODA Hideyuki
Renesas Technology Corp.
-
DOSAKA Katsumi
Renesas Technology Corp.
-
Noda H
System Core Technology Div. System Solution Business Group Renesas Technology Co.
-
Dosaka K
System Core Technology Div. System Solution Business Group Renesas Technology Co.
-
Mattausch Hans
Hiroshima Univ. Higashihiroshima‐shi Jpn
-
Mattausch Hans
Hiroshima University
-
Mattausch Hans
Research Institute For Nanodevice And Bio Systems Hiroshima University
-
Koide Tetsushi
Research Institute For Nanodevice And Bio Systems Hiroshima University
-
Koide Tetsushi
Hiroshima Univ. Higashihiroshima‐shi Jpn
-
Noda H
Hitachi Ltd. Kokubunji‐shi Jpn
-
Dosaka Katsumi
Renesas Electronics Corp. Itami‐shi Jpn
-
Arimoto Kazutami
System Core Technology Div. Renesas Technology Corp.
-
Morishita Fukashi
System Core Technology Div. Renesas Technology Corp.
-
Morishita Fukashi
Renesas Technology Corporation
-
Arimoto Kazutami
Renesas Electronics Corp.
関連論文
- A Continuous-Adaptive DDRx Interface with Flexible Round-Trip-Time and Full Self Loop-Backed AC Test
- A Study of Sense-Voltage Margins in Low-Voltage-Operating Embedded DRAM Macros(Integrated Electronics)
- A Low Power Embedded DRAM Macro for Battery-Operated LSIs(Power Optimization)(VLSI Design and CAD Algorithms)
- Analysis and Optimization of Floating Body Cell Operation for High-Speed SOI-DRAM (Special Issue on Ultra-High-Speed IC and LSI Technology)
- Features of SOI DRAM's and their Potential for Low-Voltage and/or Giga-Bit Scale DRAM's (Special Issue on ULSI Memory Technology)
- Acceleration of DCT Processing with Massive-Parallel Memory-Embedded SIMD Matrix Processor(Image Processing and Video Processing)
- A Continuous-Adaptive DDRx Interface with Flexible Round-Trip-Time and Full Self Loop-Backed AC Test
- Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization
- Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors
- Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation
- An Embedded DRAM Hybrid Macro with Auto Signa Management and Enhanced-on-Chip Tester
- A 0.18 ★m 32 Mb Embedded DRAM Macro for 3-D Graphics Controller
- A Voltage Scalable Advanced DFM RAM with Accelerated Screening for Low Power SoC Platform(Next-Generation Memory for SoC,VLSI Technology toward Frontiers of New Market)
- Circuit-Simulation Model of C_ Changes in Small-Size MOSFETs Due to High Channel-Field Gradients(the IEEE International Conference on SISPAD '02)
- A Compact Model of the Pinch-off Region of 100nm MOSFETs Based on the Surface-Potential(Semiconductor Materials and Devices)
- 1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation(Semiconductor Materials and Devices)
- Quantum Effect in Sub-0.1μm MOSFET with Pocket Technologies and Its Relevance for the On-Current Condition
- Circuit Simulation Models for Coming MOSFET Generations(Special Section of Selected Papers from the 14th Workshop on Circuits and Systems in Karuizawa)
- Integration Architecture of Content Addressable Memory and Massive-Parallel Memory-Embedded SIMD Matrix for Versatile Multimedia Processor
- Scalable FPGA/ASIC Implementation Architecture for Parallel Table-Lookup-Coding Using Multi-Ported Content Addressable Memory(Image Processing and Video Processing)
- Real-Time Huffman Encoder with Pipelined CAM-Based Data Path and Code-Word-Table Optimizer(Image Processing and Video Processing)
- A Reliability-Enhanced TCAM Architecture with Associated Embedded DRAM and ECC(Novel Device Architectures and System Integration Technologies)
- A CAM-Based Signature-Matching Co-processor with Application-Driven Power-Reduction Features(Integrated Electronics)
- Embedded Low-Power Dynamic TCAM Architecture with Transparently Scheduled Refresh(Memory, Low-Power LSI and Low-Power IP)
- Boundary-Active-Only Adaptive Power-Reduction Scheme for Region-Growing Video-Segmentation(Image Processing and Video Processing)
- Digital Low-Power Real-Time Video Segmentation by Region Growing
- 100 nm-MOSFET Model for Circuit Simulation : Challenges and Solutions(Devices and Circuits for Next Generation Multi-Media Communication Systems)
- On-Chip Memory Power-Cut Scheme Suitable for Low Power SoC Platform
- A Capacitorless Twin-Transistor Random Access Memory (TTRAM) on SOI(Memory,Low-Power, High-Speed LSIs and Related Technologies)
- An On-Chip Supply-Voltage Control System Considering PVT Variations for Worst-Caseless Lower Voltage SoC Design(Novel Device Architectures and System Integration Technologies)
- Accomplishment of At-Speed BISR for Embedded DRAMs(Special Issue on Test and Verification of VLSI)
- Modeling of Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor for Accurate Prediction of Junction Condition on Device Characteristics
- MOSFET Harmonic Distortion up to the Cutoff Frequency : Measurement and Theoretical Analysis
- Continuous Design Efforts for Ubiquitous Network Era under the Physical Limitation of Advanced CMOS(Digital,Low-Power, High-Speed LSIs and Related Technologies)
- Dynamic Floating Body Control SOI CMOS for Power Managed Multimedia ULSIs
- A Well-Synchronized Sensing/Equalizing Method for Sub-1.0-V Operating Advanced DRAM's (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
- Prediction of Circuit-Performance Variations from Technology Variations for Reliable 100nm SOC Circuit Design
- A Long Data Retention SOI DRAM with the Body Refresh Function (Special Issue on New Concept Device and Novel Architecture LSIs)
- SOI-DRAM Circuit Technologies for Low Power High Speed Multigiga Scale Memories
- Low Power Platform for Embedded Processor LSIs
- Software-Based Parallel Cryptographic Solution with Massive-Parallel Memory-Embedded SIMD Matrix Architecture for Data-Storage Systems
- Compact Modeling of Expansion Effects in LDMOS
- Laterally Diffused Metal Oxide Semiconductor Model for Device and Circuit Optimization
- Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation
- Compact Modeling of Expansion Effects in LDMOS