Murakami Takahiro | HiSIM Research Center, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

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概要

• 同名の論文著者
• HiSIM Research Center, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japanの論文著者

関連著者

• MURAKAMI Takahiro

  Hiroshima University

• Murakami Takahiro

  HiSIM Research Center, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Murakami Takahiro

  Hisim Research Center Hiroshima University

• Mattausch Hans

  Hiroshima Univ. Higashihiroshima‐shi Jpn

• OKA Hideki

  Fujitsu Laboratories Ltd.

• Mattausch Hans

  Hiroshima University

• SADACHIKA Norio

  Hiroshima University

• TANABE Ryou

  Fujitsu laboratories Ltd.

• MIURA-MATTAUSCH Mitiko

  Hiroshima University

• Oka Hideki

  Fujitsu Laboratories Ltd

• Miura Mattausch

  Hisim Research Center Hiroshima University

• Sadachika Norio

  Hiroshima-university

• Sadachika Norio

  Hisim Research Center Hiroshima University

• Sadachika Norio

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Takane Yositake

  Department Of Applied Physics Osaka City University

• Murakami Takahiro

  Department Of Applied Chemistry School Of Engineering Tokai University

• ANDO Makoto

  HiSIM Research Center, Hiroshima University

• Ando Makoto

  Hisim Research Center Hiroshima University

• TAKANE Yositake

  Department of Quantum Matter, ADSM, Hiroshima University

• MURAKAMI Takahiro

  Department of Quantum Matter, ADSM, Hiroshima University

• Miura-Mattausch Mitiko

  HiSIM Research Center, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Sadachika Norio

  Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Ando Makoto

  Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Yoshida Takaki

  NEC Informatec Systems, Ltd., Kawasaki 211-866, Japan

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著作論文

• Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization
• Modeling of Floating-Body Effect in SOI-MOSFET with Complete Surface-Potential Description
• Pulse Control of Decoherence with Population Decay(General)
• Modeling of Floating-Body Effect in Silicon-on-Insulator Metal–Oxide–Silicon Field-Effect Transistor with Complete Surface-Potential-Based Description

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