Murakami Takahiro | HiSIM Research Center, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
スポンサーリンク
概要
- 同名の論文著者
- HiSIM Research Center, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japanの論文著者
関連著者
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MURAKAMI Takahiro
Hiroshima University
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Murakami Takahiro
HiSIM Research Center, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Murakami Takahiro
Hisim Research Center Hiroshima University
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Mattausch Hans
Hiroshima Univ. Higashihiroshima‐shi Jpn
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OKA Hideki
Fujitsu Laboratories Ltd.
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Mattausch Hans
Hiroshima University
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SADACHIKA Norio
Hiroshima University
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TANABE Ryou
Fujitsu laboratories Ltd.
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MIURA-MATTAUSCH Mitiko
Hiroshima University
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Oka Hideki
Fujitsu Laboratories Ltd
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Miura Mattausch
Hisim Research Center Hiroshima University
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Sadachika Norio
Hiroshima-university
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Sadachika Norio
Hisim Research Center Hiroshima University
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Sadachika Norio
Graduate School Of Advanced Sciences Of Matter Hiroshima University
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Takane Yositake
Department Of Applied Physics Osaka City University
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Murakami Takahiro
Department Of Applied Chemistry School Of Engineering Tokai University
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ANDO Makoto
HiSIM Research Center, Hiroshima University
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Ando Makoto
Hisim Research Center Hiroshima University
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TAKANE Yositake
Department of Quantum Matter, ADSM, Hiroshima University
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MURAKAMI Takahiro
Department of Quantum Matter, ADSM, Hiroshima University
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Miura-Mattausch Mitiko
HiSIM Research Center, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Sadachika Norio
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Ando Makoto
Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
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Yoshida Takaki
NEC Informatec Systems, Ltd., Kawasaki 211-866, Japan
著作論文
- Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization
- Modeling of Floating-Body Effect in SOI-MOSFET with Complete Surface-Potential Description
- Pulse Control of Decoherence with Population Decay(General)
- Modeling of Floating-Body Effect in Silicon-on-Insulator Metal–Oxide–Silicon Field-Effect Transistor with Complete Surface-Potential-Based Description