Modeling of Floating-Body Effect in SOI-MOSFET with Complete Surface-Potential Description
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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MURAKAMI Takahiro
Hiroshima University
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Miura Mattausch
Hisim Research Center Hiroshima University
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Sadachika Norio
Hisim Research Center Hiroshima University
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Murakami Takahiro
Hisim Research Center Hiroshima University
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ANDO Makoto
HiSIM Research Center, Hiroshima University
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Ando Makoto
Hisim Research Center Hiroshima University
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Murakami Takahiro
HiSIM Research Center, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan
関連論文
- Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization
- Modeling of Floating-Body Effect in SOI-MOSFET with Complete Surface-Potential Description
- Pulse Control of Decoherence with Population Decay(General)
- Modeling of Floating-Body Effect in Silicon-on-Insulator Metal–Oxide–Silicon Field-Effect Transistor with Complete Surface-Potential-Based Description