Modeling of Floating-Body Effect in Silicon-on-Insulator Metal–Oxide–Silicon Field-Effect Transistor with Complete Surface-Potential-Based Description

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概要

• 論文の詳細を見る

• In this work, a silicon-on-insulator (SOI) metal–oxide–silicon field-effect transistor (MOSFET) model for circuit simulation is reported, which covers also the floating-body effect induced by the additional charge generated through impact ionization. The model is based on the complete surface-potential description and solves the Poisson equation with inclusion of the impact ionization. The developed compact SOI-MOSFET model is verified to reproduce two-dimensional-device simulation results very well, and shows the characteristic potential increase at the back side of the SOI layer. The steep drain-current ($I_{\text{ds}}$) increase at high drain-voltages ($V_{\text{ds}}$), caused by the floating-body effect, is also accurately captured.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-04-25

著者

• MURAKAMI Takahiro

  Hiroshima University

• Sadachika Norio

  Graduate School Of Advanced Sciences Of Matter Hiroshima University

• Murakami Takahiro

  Hisim Research Center Hiroshima University

• Murakami Takahiro

  HiSIM Research Center, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Miura-Mattausch Mitiko

  HiSIM Research Center, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Sadachika Norio

  Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Ando Makoto

  Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan

• Yoshida Takaki

  NEC Informatec Systems, Ltd., Kawasaki 211-866, Japan

関連論文

• Suppressed short-channel effect of DG-MOSFET and its modeling
• Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization
• Modeling of Floating-Body Effect in SOI-MOSFET with Complete Surface-Potential Description
• Effect of Carrier Transit Delay on Complementary Metal–Oxide–Semiconductor Switching Performance
• Pulse Control of Decoherence with Population Decay(General)
• Surface-Potential-Based Metal–Oxide–Silicon-Varactor Model for RF Applications
• Suppressed Short-Channel Effect of Double-Gate Metal Oxide Semiconductor Field-Effect Transistor and Its Modeling
• Modeling of Subthreshold Swing and Analysis of Short-Channel Effects in Double-Gate Metal Oxide Semiconductor Field-Effect Transistors
• Modeling of Floating-Body Effect in Silicon-on-Insulator Metal–Oxide–Silicon Field-Effect Transistor with Complete Surface-Potential-Based Description
• Complete Surface-Potential-Based Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model for Circuit Simulation

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