Atomistic Simulation of RTA Annealing for Shallow Junction Formation Characterizing both BED and TED(<Special Issue>the IEEE International Conference on SISPAD '02)
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概要
- 論文の詳細を見る
An atomistic model for annealing simulation is presented. To well simulate both BED (Boron Enhanced Diffusion) [1] and TED (Transient Enhanced Diffusion), the surface emission model, which describes the emission of point defects from surface during annealing, is implemented. The simulation is carried out for RTA annealing (1000°C or 1050°C) after B implantation. The implantation energy varies from 0.5keV to 13keV. Agreements between simulation and SIMS data are achieved. Both BED and TED phenomena are characterized. The Enhancement of diffusion is discussed. The surface emission model is studied by simulation. The results shows that the surface emission has little effect on annealing of B 10keV implantation while obvious effect on annealing of B 0.5keV implantation. It indicates that the surface emission is much more necessary to simulate BED than TED.
- 社団法人電子情報通信学会の論文
- 2003-03-01
著者
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Oka H
Central Research Laboratories Zeria Pharmaceutical Co. Ltd.
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OKA Hideki
Fujitsu Laboratories Ltd.
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ZHANG Xing
Institute of Advanced Material Study, Kyushu University
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Oka Hideki
Fujitsu Laboratories Ltd
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Yu Min
Institute of Atomic Energy, Academia Sinica
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HUANG Ru
Institute of Microelectronics,Peking University
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WANG Yangyuan
Institute of Microelectronics,Peking University
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Zhang X
Institute Of Microelectronics Peking University
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Zhang Xing
Institute Of Advanced Material Study Kyushu University
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Huang Ru
Institute Of Microelectronics Peking University
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Wang Yangyuan
Institute Of Microelectronics Peking University
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Yu Min
Institute Of Atomic Energy Academia Sinica
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Yu Min
Institute Of Microelectronics Peking University
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