Performance Improvement of Capacitorless Dynamic Random Access Memory Cell with Band-Gap Engineered Source and Drain

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概要

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• A novel band-gap engineered source and drain floating body cell (BESD-FBC) for capacitorless dynamic random access memory (DRAM) Cell is proposed and investigated for the first time. The energy band offset with silicon–carbon source and drain can help to form a deeper potential well in the body region, which can effectively store more holes. Compared with normal FBC, BESD-FBC can obtain larger sensing margin and longer retention time due to more stored holes and small hole leakage current. These improvements show that the proposed BESD-FBC has great potentials for future high density capacitorless DRAM application.

• 2010-04-25

著者

• Huang Ru

  Institute Of Microelectronics Peking University

• Dake Wu

  Institute of Microelectronics, Peking University, Beijing 100871, China

• Poren Tang

  Institute of Microelectronics, Peking University, Beijing 100871, China

• Ru Huang

  Institute of Microelectronics, Peking University, Beijing 100871, China

• Tang Poren

  Institute of Microelectronics, Peking University, Beijing 100871, China

• Wu Dake

  Institute of Microelectronics, Peking University, Beijing 100871, China

関連論文

• Atomistic Simulation of RTA Annealing for Shallow Junction Formation Characterizing both BED and TED(the IEEE International Conference on SISPAD '02)
• New Observations and Impacts of Diameter-Dependent Annealing Effects in Silicon Nanowire Transistors
• Performance Improvement of Capacitorless Dynamic Random Access Memory Cell with Band-Gap Engineered Source and Drain
• Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN p-Type Metal–Oxide–Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition
• High Density Capacitorless Dynamic Random Access Memory Cell with Quasi Silicon-on-Insulator Structure Based on Bulk Substrate

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