Huang Ru | Institute Of Microelectronics Peking University
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概要
関連著者
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Huang Ru
Institute Of Microelectronics Peking University
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Wang Yangyuan
Institute Of Microelectronics Peking University
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Tang Poren
Institute of Microelectronics, Peking University, Beijing 100871, China
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Wu Dake
Institute of Microelectronics, Peking University, Beijing 100871, China
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Oka H
Central Research Laboratories Zeria Pharmaceutical Co. Ltd.
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OKA Hideki
Fujitsu Laboratories Ltd.
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ZHANG Xing
Institute of Advanced Material Study, Kyushu University
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Oka Hideki
Fujitsu Laboratories Ltd
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Yu Min
Institute of Atomic Energy, Academia Sinica
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HUANG Ru
Institute of Microelectronics,Peking University
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WANG Yangyuan
Institute of Microelectronics,Peking University
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Zhang X
Institute Of Microelectronics Peking University
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Zhang Xing
Institute Of Advanced Material Study Kyushu University
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Yu Min
Institute Of Atomic Energy Academia Sinica
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Yu Min
Institute Of Microelectronics Peking University
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Dake Wu
Institute of Microelectronics, Peking University, Beijing 100871, China
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Poren Tang
Institute of Microelectronics, Peking University, Beijing 100871, China
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Wang Runsheng
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Yu Tao
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Ru Huang
Institute of Microelectronics, Peking University, Beijing 100871, China
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Huang Ru
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Yangyuan Wang
Institute of Microelectronics, Peking University, Beijing 100871, China
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Wang Yangyuan
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Ding Wei
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Yilin Zhang
Institute of Microelectronics, Peking University, Beijing 100871, China
著作論文
- Atomistic Simulation of RTA Annealing for Shallow Junction Formation Characterizing both BED and TED(the IEEE International Conference on SISPAD '02)
- New Observations and Impacts of Diameter-Dependent Annealing Effects in Silicon Nanowire Transistors
- Performance Improvement of Capacitorless Dynamic Random Access Memory Cell with Band-Gap Engineered Source and Drain
- High Density Capacitorless Dynamic Random Access Memory Cell with Quasi Silicon-on-Insulator Structure Based on Bulk Substrate