Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN p-Type Metal–Oxide–Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition

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概要

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• Gate dielectric traps are becoming a major concern in the high-$k$/metal gate devices. In this paper, new experimental results and in-depth study on gate current random telegraph signal ($I_{\text{g}}$ RTS) noise in SiON/HfO2/TaN gate stack p-type metal–oxide–semiconductor field-effect transistors (PMOSFETs) are reported. Single carrier trapping/detrapping in the high-$k$/metal gate stack under negative bias temperature instability (NBTI) stress is observed for the first time. The location of traps, the impacts of gate bias, temperature and substrate bias are discussed for understanding the RTS mechanism in high-$k$ devices. Moreover, during long time stress, an abrupt change of amplitude of $I_{\text{g}}$ fluctuation and the mean capture and emission time is also observed for the first time, due to new trap generated or activated by the NBTI degradation. The characteristics of the single carrier trapping/detrapping behavior under NBTI stress are very different from that on the normal bias condition, which give us more information about the traps in the high-$k$/metal gate stack.

• 2010-04-25

著者

• Paul Kirsch

  SEMATECH, Austin, TX 78741, U.S.A.

• Zhang Liangliang

  Institute of Microelectronics, Peking University, Beijing 100871, P. R. China

• Liu Changze

  Institute of Microelectronics, Peking University, Beijing 100871, P. R. China

• Wang Runsheng

  Institute of Microelectronics, Peking University, Beijing 100871, P. R. China

• Ru Huang

  Institute of Microelectronics, Peking University, Beijing 100871, P. R. China

• Tao Yu

  Institute of Microelectronics, Peking University, Beijing 100871, P. R. China

• Jing Zhuge

  Institute of Microelectronics, Peking University, Beijing 100871, P. R. China

• Hsing-Huang Tseng

  Ingram School of Engineering, Texas State University-San Marcos, San Macros, TX 78666, U.S.A.

• Yangyuan Wang

  Institute of Microelectronics, Peking University, Beijing 100871, P. R. China

• Ru Huang

  Institute of Microelectronics, Peking University, Beijing 100871, China

• Yangyuan Wang

  Institute of Microelectronics, Peking University, Beijing 100871, China

• Runsheng Wang

  Institute of Microelectronics, Peking University, Beijing 100871, P. R. China

• Liangliang Zhang

  Institute of Microelectronics, Peking University, Beijing 100871, P. R. China

関連論文

• New Observations and Impacts of Diameter-Dependent Annealing Effects in Silicon Nanowire Transistors
• Performance Improvement of Capacitorless Dynamic Random Access Memory Cell with Band-Gap Engineered Source and Drain
• Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN p-Type Metal–Oxide–Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition
• Forward-Body-Bias-Enhanced Negative Bias Temperature Instability Recovery of p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
• High Density Capacitorless Dynamic Random Access Memory Cell with Quasi Silicon-on-Insulator Structure Based on Bulk Substrate

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