Zhang Liangliang | Institute of Microelectronics, Peking University, Beijing 100871, P. R. China

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概要

関連著者

Paul Kirsch
SEMATECH, Austin, TX 78741, U.S.A.
Zhang Liangliang
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
Liu Changze
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
Wang Runsheng
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
Ru Huang
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
Tao Yu
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
Jing Zhuge
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
Hsing-Huang Tseng
Ingram School of Engineering, Texas State University-San Marcos, San Macros, TX 78666, U.S.A.
Yangyuan Wang
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
Ru Huang
Institute of Microelectronics, Peking University, Beijing 100871, China
Yangyuan Wang
Institute of Microelectronics, Peking University, Beijing 100871, China
Runsheng Wang
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
Liangliang Zhang
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China

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著作論文

Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN p-Type Metal–Oxide–Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition

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