Forward-Body-Bias-Enhanced Negative Bias Temperature Instability Recovery of p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
スポンサーリンク
概要
- 論文の詳細を見る
Experimental investigation on the negative bias temperature instability (NBTI) recovery of p-channel metal–oxide–semiconductor field-effect transistors (pMOSFETs) with forward body bias (FBB) was conducted. Our results show that not only the positive gate bias but also the FBB will enhance the recovery of NBTI for pMOSFETs. A forward-body-bias-enhanced NBTI recovery mechanism was proposed with evidence of the NBTI recovery with FBB dependence and corresponding electron/hole density simulation results. Furthermore, the dynamic NBTI degradation was compared with and without FBB. The enhancement of NBTI recovery by FBB gives a comparable lifetime of zero body bias, which indicates that the forward body biasing technique can improve the drive capability without deteriorating NBTI performance.
- 2010-04-25
著者
-
Du Gang
Institute Of Microelectronics Peking University
-
Xing Zhang
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
-
Gang Du
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
-
Yangyuan Wang
Institute of Microelectronics, Peking University, Beijing 100871, China
-
Yang Yunxiang
Institute of Microelectronics, Peking University, Beijing 100871, China
-
Yunxiang Yang
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
-
He Yandong
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
-
Ganggang Zhang
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
-
Yandong He
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
-
He Yandong
Institute of Microelectronics and Key Laboratory of Microelectronics Devices and Circuits, Peking University, Beijing 100871, P. R. China
関連論文
- Evaluations of Scaling Properties for Ge on Insulator MOSFETs in Nano-Scale
- Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors
- Evaluations of Scaling Properties for Ge on Insulator MOSFETs in Nano-Scale
- Characteristics of Gate Current Random Telegraph Signal Noise in SiON/HfO2/TaN p-Type Metal–Oxide–Semiconductor Field-Effect Transistors under Negative Bias Temperature Instability Stress Condition
- Forward-Body-Bias-Enhanced Negative Bias Temperature Instability Recovery of p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- High Density Capacitorless Dynamic Random Access Memory Cell with Quasi Silicon-on-Insulator Structure Based on Bulk Substrate
- Triple-Gate Fin Field Effect Transistors with Fin-Thickness Optimization to Reduce the Impact of Fin Line Edge Roughness
- Investigation of Hot Carrier Degradation in Shallow-Trench-Isolation-Based High-Voltage Laterally Diffused Metal-Oxide-Semiconductor Field-Effect Transistors by a Novel Direct Current Current-Voltage Technique (Special Issue : Solid State Devices and Mate
- Impact of Gate Overlap on Performance of Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors Including Gate Induced Barrier Lowering Effect
- Monte Carlo Simulation of Band-to-Band Tunneling in Silicon Devices
- Effects of Shell Strain on Valence Band Structure and Transport Properties of Ge/Si1-xGex Core–Shell Nanowire
- Simulation of Retention Behavior for the Phase Change Memory
- A Simple Circuit to Investigate Threshold Voltage Variation and Its Application in Monitoring Negative Bias Temperature Instability Degradation
- Improved Memory Characteristics of A Novel TaN/Al
- Impact of Junction Nonabruptness on Random-Discrete-Dopant Induced Variability in Intrinsic Channel Trigate Metal--Oxide--Semiconductor Field-Effect Transistors
- Impact of Junction Nonabruptness on Random-Discrete-Dopant Induced Variability in Intrinsic Channel Trigate Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials)
- Optimization of Conductive Filament of Oxide-Based Resistive-Switching Random Access Memory for Low Operation Current by Stochastic Simulation