Evaluations of Scaling Properties for Ge on Insulator MOSFETs in Nano-Scale

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概要

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• Germanium metal-oxide-semiconductor field-effect transistors (MOSFETs) have attracted tremendous attention due to the high carrier mobility especially in the low-field. Compared to Si, in bulk germanium the velocity would saturate at a lower field with a lower saturation velocity. Thus the scaling behavior of germanium MOSFET with gate length in nano-scale is very important. In this work, characteristics of both n- and p-channel germanium on Insulator (GOI) MOSFETs with channel length ($L_{\text{ch}}$) ranging from 20 nm to 130 nm are simulated by 2D self-consistent full-band Monte Carlo device simulator to investigate the scaling properties. The results indicate that both for n and p channel GOI MOSFETs have favorable scaling properties in nano-scale due to the non-stationary transport near source side especially for p channel device. But the surface roughness scattering is a critical issue that might suppress the non-stationary transport. Short channel effect (SCE) is serious in GOI devices and much thinner Germanium layer have to use to optimize the performance.

• 2005-04-15

著者

• Liu Xiao

  Institute Of Bioengineering College Of Life Sciences Zhejiang Sci-tech University

• Kang Jin

  Institute Of Microelectronics Peking University

• Du Gang

  Institute Of Microelectronics Peking University

• Xia Zhi

  Institute Of Microelectronics Peking University

• WANG Ya

  Institute of Microelectronics, Peking University

• Han Ru

  Institute Of Microelectronics Peking University

• Hou Dan

  Institute Of Microelectronics Peking University

• Hou Dan

  Institute of Microelectronics, Peking University, Beijing 100871, P. R. China

• Liu Xiao

  Institute of Microelectronics, Peking University, Beijing 100871, P. R. China

• Kang Jin

  Institute of Microelectronics, Peking University, Beijing 100871, P. R. China

• Wang Ya

  Institute of Microelectronics, Peking University, Beijing 100871, P. R. China

• Han Ru

  Institute of Microelectronics, Peking University, Beijing 100871, P. R. China

• WANG Ya

  Institute of Crop Science, College of Agriculture and Biotechnology, Zhejiang University

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