Du Gang | Institute Of Microelectronics Peking University
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概要
関連著者
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Du Gang
Institute Of Microelectronics Peking University
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Liu Xiaoyan
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, P. R. China
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Kang Jinfeng
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, P. R. China
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Liu Xiao
Institute Of Bioengineering College Of Life Sciences Zhejiang Sci-tech University
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Liu Xiaoyan
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Han Ruqi
Institute Of Microelectronics Peking University
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Kang Jin
Institute Of Microelectronics Peking University
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Xia Zhi
Institute Of Microelectronics Peking University
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WANG Ya
Institute of Microelectronics, Peking University
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Yang Yunxiang
Institute of Microelectronics, Peking University, Beijing 100871, China
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Du Gang
Institute of Microelectronics, Peking University, Beijing 100871, China
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Wei Kang
Institute of Microelectronics, Peking University, 100871, P. R. China
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Kang Jin-feng
Institute Of Microelectronics Peking University
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HOU Dan
Institute of Microelectronics, Peking University
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HAN Ru
Institute of Microelectronics, Peking University
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Han Ru-qi
Institute Of Microelectronics Peking University
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Han Ru
Institute Of Microelectronics Peking University
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Hou Dan
Institute Of Microelectronics Peking University
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Wang Jian
Institute Of Image Communication And Information Processing Shanghai Jiao Tong University
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Xing Zhang
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Jinfeng Kang
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, Beijing 100871, China
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Du Gang
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Gang Du
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, Beijing 100871, China
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Gang Du
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Zhang Feifei
Institute of Microelectronics, Peking University, Beijing 100871, China
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Gao Bin
Institute of Microelectronics, Peking University, Beijing 100871, China
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Chen Bing
Institute of Microelectronics, Peking University, Beijing 100871, China
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Huang Peng
Institute of Microelectronics, Peking University, Beijing 100871, China
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Kang Jinfeng
Institute of Microelectronics, Peking University, Beijing 100871, China
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Hou Dan
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Xia Zhiliang
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Song Yuncheng
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Yangyuan Wang
Institute of Microelectronics, Peking University, Beijing 100871, China
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Zeng Lang
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Liu Xiao
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Liu Xiao-Yan
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Kang Jin
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Yuning Zhao
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, Beijing 100871, China
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Xu Honghua
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, Beijing 100871, China
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Yuhui He
Key Laboratory of Nanofabrication and Novel Devices Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
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Chun Fan
Computer Center of Peking University, Beijing 100871, China
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Ruqi Han
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, Beijing 100871, China
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Zhao Yuning
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, P. R. China
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Han Ruqi
Institute of Microelectronics, Peking University, Beijing 100871, China
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Han Ruqi
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, P. R. China
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Yu Shimeng
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, P. R. China
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Wang Ya
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Xiaoyan Liu
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, Beijing 100871, China
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Han Ru
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Yunxiang Yang
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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He Yandong
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Ganggang Zhang
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Yandong He
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Honghua Xu
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, Beijing 100871, China
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Liu Xiao
Institute of Microelectronics, Peking University, 100871, P. R. China
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Liu Xiao-Yan
Institute of Cardiovascular Research, Key Laboratory for Atherosclerology of Hunan Province, Life Science Research Center
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He Yandong
Institute of Microelectronics and Key Laboratory of Microelectronics Devices and Circuits, Peking University, Beijing 100871, P. R. China
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Liu Fei
Institute of Microelectronics, Peking University, Beijing 100871, China
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Lian Guijun
School of Physics, Peking University, Beijing 100871, China
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Peng Yahua
Institute of Microelectronics, Peking University, Beijing 100871, China
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Chen Jian
Shenzhen Graduate School, Peking University, Guangdong 518055, China
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Song Decheng
Shenzhen Graduate School, Peking University, Guangdong 518055, China
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Deng Yexin
Institute of Microelectronics, Peking University, Beijing 100871, China
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Yu Di
Institute of Microelectronics, Peking University, Beijing 100871, China
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Liu Lingfeng
Institute of Microelectronics, Peking University, Beijing 100871, China
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WANG Ya
Institute of Crop Science, College of Agriculture and Biotechnology, Zhejiang University
著作論文
- Evaluations of Scaling Properties for Ge on Insulator MOSFETs in Nano-Scale
- Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors
- Evaluations of Scaling Properties for Ge on Insulator MOSFETs in Nano-Scale
- Forward-Body-Bias-Enhanced Negative Bias Temperature Instability Recovery of p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- Triple-Gate Fin Field Effect Transistors with Fin-Thickness Optimization to Reduce the Impact of Fin Line Edge Roughness
- Impact of Gate Overlap on Performance of Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors Including Gate Induced Barrier Lowering Effect
- Monte Carlo Simulation of Band-to-Band Tunneling in Silicon Devices
- Effects of Shell Strain on Valence Band Structure and Transport Properties of Ge/Si1-xGex Core–Shell Nanowire
- Simulation of Retention Behavior for the Phase Change Memory
- Improved Memory Characteristics of A Novel TaN/Al
- Impact of Junction Nonabruptness on Random-Discrete-Dopant Induced Variability in Intrinsic Channel Trigate Metal--Oxide--Semiconductor Field-Effect Transistors
- Impact of Junction Nonabruptness on Random-Discrete-Dopant Induced Variability in Intrinsic Channel Trigate Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials)
- Optimization of Conductive Filament of Oxide-Based Resistive-Switching Random Access Memory for Low Operation Current by Stochastic Simulation