Liu Xiaoyan | Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, P. R. China
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概要
- Liu Xiaoyanの詳細を見る
- 同名の論文著者
- Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, P. R. Chinaの論文著者
関連著者
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Liu Xiaoyan
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, P. R. China
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Du Gang
Institute Of Microelectronics Peking University
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Kang Jinfeng
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, P. R. China
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Liu Xiaoyan
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Han Ruqi
Institute Of Microelectronics Peking University
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Gao Bin
Institute of Microelectronics, Peking University, Beijing 100871, China
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Du Gang
Institute of Microelectronics, Peking University, Beijing 100871, China
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Wang Yi
Institute For Horticultural Plants China Agricultural University
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Wang Jian
Institute Of Image Communication And Information Processing Shanghai Jiao Tong University
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Jinfeng Kang
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, Beijing 100871, China
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Du Gang
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Gang Du
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, Beijing 100871, China
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Zhang Feifei
Institute of Microelectronics, Peking University, Beijing 100871, China
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Chen Bing
Institute of Microelectronics, Peking University, Beijing 100871, China
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Huang Peng
Institute of Microelectronics, Peking University, Beijing 100871, China
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Liu Lifeng
Institute of Microelectronics, Peking University, Beijing 100871, China
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Kang Jinfeng
Institute of Microelectronics, Peking University, Beijing 100871, China
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Kang Jinfeng
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Xia Zhiliang
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Song Yuncheng
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Xu Nuo
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Sun Bing
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Han Dedong
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Yuning Zhao
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, Beijing 100871, China
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Xu Honghua
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, Beijing 100871, China
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Yuhui He
Key Laboratory of Nanofabrication and Novel Devices Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
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Chun Fan
Computer Center of Peking University, Beijing 100871, China
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Ruqi Han
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, Beijing 100871, China
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Zhao Yuning
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, P. R. China
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Han Ruqi
Institute of Microelectronics, Peking University, Beijing 100871, China
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Han Ruqi
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Han Ruqi
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, P. R. China
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Yu Shimeng
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, P. R. China
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Yang Yunxiang
Institute of Microelectronics, Peking University, Beijing 100871, China
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Xiaoyan Liu
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, Beijing 100871, China
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Honghua Xu
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, Beijing 100871, China
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Liu Fei
Institute of Microelectronics, Peking University, Beijing 100871, China
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Lian Guijun
School of Physics, Peking University, Beijing 100871, China
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Peng Yahua
Institute of Microelectronics, Peking University, Beijing 100871, China
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Chen Jian
Shenzhen Graduate School, Peking University, Guangdong 518055, China
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Song Decheng
Shenzhen Graduate School, Peking University, Guangdong 518055, China
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Deng Yexin
Institute of Microelectronics, Peking University, Beijing 100871, China
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Yu Di
Institute of Microelectronics, Peking University, Beijing 100871, China
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Liu Lingfeng
Institute of Microelectronics, Peking University, Beijing 100871, China
著作論文
- Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors
- Triple-Gate Fin Field Effect Transistors with Fin-Thickness Optimization to Reduce the Impact of Fin Line Edge Roughness
- Monte Carlo Simulation of Band-to-Band Tunneling in Silicon Devices
- Effects of Shell Strain on Valence Band Structure and Transport Properties of Ge/Si1-xGex Core–Shell Nanowire
- Simulation of Retention Behavior for the Phase Change Memory
- The Effect of Current Compliance on the Resistive Switching Behaviors in TiN/ZrO2/Pt Memory Device
- Improved Memory Characteristics of A Novel TaN/Al
- Optimization of Conductive Filament of Oxide-Based Resistive-Switching Random Access Memory for Low Operation Current by Stochastic Simulation