Yang Yunxiang | Institute of Microelectronics, Peking University, Beijing 100871, China
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概要
- Yang Yunxiangの詳細を見る
- 同名の論文著者
- Institute of Microelectronics, Peking University, Beijing 100871, Chinaの論文著者
関連著者
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Du Gang
Institute Of Microelectronics Peking University
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Yang Yunxiang
Institute of Microelectronics, Peking University, Beijing 100871, China
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Han Ruqi
Institute Of Microelectronics Peking University
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Xing Zhang
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Gang Du
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Liu Xiaoyan
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Yangyuan Wang
Institute of Microelectronics, Peking University, Beijing 100871, China
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Han Ruqi
Institute of Microelectronics, Peking University, Beijing 100871, China
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Liu Xiaoyan
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, P. R. China
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Du Gang
Institute of Microelectronics, Peking University, Beijing 100871, China
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Yunxiang Yang
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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He Yandong
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Ganggang Zhang
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Yandong He
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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He Yandong
Institute of Microelectronics and Key Laboratory of Microelectronics Devices and Circuits, Peking University, Beijing 100871, P. R. China
著作論文
- Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors
- Forward-Body-Bias-Enhanced Negative Bias Temperature Instability Recovery of p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors