Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors
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概要
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The effects of intrinsic parameter fluctuations, including line-edge-roughness (LER), silicon-body thickness variation (STV) and work-function variation (WFV), in 20-nm-gate variable-$\gamma$ silicon-on-thin-box (SOTB) metal oxide semiconductor field effect transistors (MOSFETs) have been investigated and compared with those of the conventional SOTB. Results show that the variable-$\gamma$ SOTB offers not only an enhanced $I_{\text{on}}$ but also a reduced $I_{\text{on}}$ fluctuation with a small increase in the active-state $I_{\text{off}}$ fluctuation. The $V_{\text{th}}$-roll-off value in the variable-$\gamma$ SOTB can be reduced by adopting a reverse-biased side gate to optimize the short channel effect, but the variability of the DIBL effect is enlarged. It is expected that a thinner silicon body can be used to reduce the dominant variability sources.
- 2011-04-25
著者
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Du Gang
Institute Of Microelectronics Peking University
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Han Ruqi
Institute Of Microelectronics Peking University
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Liu Xiaoyan
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Han Ruqi
Institute of Microelectronics, Peking University, Beijing 100871, China
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Yang Yunxiang
Institute of Microelectronics, Peking University, Beijing 100871, China
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Liu Xiaoyan
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, P. R. China
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Du Gang
Institute of Microelectronics, Peking University, Beijing 100871, China
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